Experimental results on the charge-state-dependent sputtering of metallic gold nanoislands are presented. Irradiations with slow highly charged ions of metallic targets were previously considered to show no charge state dependent effects on ion-induced material modification, since these materials possess enough free electrons to dissipate the deposited potential energy before electron-phonon coupling can set in. By reducing the size of the target material down to the nanometer regime and thus enabling a geometric energy confinement, a possibility is demonstrated to erode metallic surfaces by charge state related effects in contrast to regular kinetic sputtering.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1002/smll.202207263 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
A Review of Transparent Conducting Films (TCFs): Prospective ITO and AZO Deposition Methods and Applications.
Nanomaterials (Basel)
December 2024
Division of Physics, Engineering, Mathematics and Computer Sciences and Optical Science Center for Applied Research, Delaware State University, Dover, DE 19901, USA.
This study offers a comprehensive summary of the current states as well as potential future directions of transparent conducting oxides (TCOs), particularly tin-doped indium oxide (ITO), the most readily accessible TCO on the market. Solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), antireflection (AR) coatings for airbus windows, photovoltaic and optoelectronic devices, transparent p-n junction diodes, etc. are a few of the best uses for this material.
View Article and Find Full Text PDFThe Impact of Laser Irradiation on Thin ZrN Films Deposited by Pulsed DC Magnetron Sputtering.
Nanomaterials (Basel)
December 2024
School of Nuclear Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China.
Transition metal nitrides have extensive applications, including magnetic storage devices, hardware resistance coatings, and low-temperature fuel cells. This study investigated the structural, electrical, and mechanical properties of thin zirconium nitride (ZrN) films by examining the effects of laser irradiation times. Thin ZrN films were deposited on glass substrates using pulsed DC magnetron sputtering and irradiated with a diode laser for 6 and 10 min.
View Article and Find Full Text PDFRoom-Temperature Deposition of δ-NiGa Thin Films and Nanoparticles via Magnetron Sputtering.
ACS Omega
December 2024
DTU Physics, Technical University of Denmark, Kongens Lyngby DK-2800, Denmark.
Magnetron sputtering is a versatile method for investigating model system catalysts thanks to its simplicity, reproducibility, and chemical-free synthesis process. It has recently emerged as a promising technique for synthesizing δ-NiGa thin films. Physically deposited thin films have significant potential to clarify certain aspects of catalysts by eliminating parameters such as particle size dependence, metal-support interactions, and the presence of surface ligands.
View Article and Find Full Text PDFBEOL Three-Dimensional Stackable Oxide Semiconductor CMOS Inverter with a High Voltage Gain of 233 at Cryogenic Temperatures.
Nano Lett
December 2024
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576.
Targeting high-performance computing at cryogenic temperatures, we report back-end-of-line (BEOL)-compatible p-type Te-TeO field effect transistors (FETs) deposited using a sputtering method that is cost-effective, large-scale manufacturable, and highly controllable. Combined with the indium tin oxide channel n-FETs employing a common gate and HfO gate dielectric, BEOL three-dimensional stackable oxide semiconductor complementary metal oxide semiconductor (CMOS) inverters were further realized, demonstrating excellent threshold voltage matching, with a high voltage gain of 132 with a 2 V supply voltage () at room temperature. At cryogenic temperatures, the CMOS inverter exhibits significantly enhanced performance, achieving a voltage gain of 233 at a of 2 V with a wide noise margin of 86%.
View Article and Find Full Text PDFEnhancing Rashba Spin-Splitting Strength by Orbital Hybridization.
ACS Nano
December 2024
Department of Materials Science and Engineering, National University of Singapore, Singapore117575, Singapore.
A Rashba spin-splitting state with spin-momentum locking enables the charge-spin interconversion known as the Rashba effect, induced by the interplay of inversion symmetry breaking (ISB) and spin-orbit coupling (SOC). Enhancing spin-splitting strength is promising to achieve high spin-orbit torque (SOT) efficiency for low-power-consumption spintronic devices. However, the energy scale of natural ISB at the interface is relatively small, leading to the weak Rashba effect.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!