Plasma-enhanced atomic layer deposition (PEALD) is utilized to improve the barrier properties of an organic chip-film patch (CFP) when it is used as an implant to prevent moisture and ions from migrating into the embedded electronic circuits. For this purpose, surface condition and material properties of eight modifications of AlO-TiO nanolaminates sequentially deposited on polyimide PI-2611 films are evaluated in detail. The effect of stress-induced warpage of the deposited AlO-TiO on the wafer level is calculated with the Stoney equation and reveals higher tensile stress values while increasing the thickness of AlO-TiO nanolaminates from 20 up to 80 nm. Contact angle measurement and atomic force microscopy are used to investigate the surface energy and wettability, as well as the surface morphology of polyimide-AlO-TiO interfaces. We show that plasma treatment of pristine polyimide leads to an enhanced adhesion force of the PEAL-deposited layer by a factor of 1.3. The water vapor transmission rate (WVTR) is determined by exposing the coated polyimide films to 85% humidity and 23 °C and yields down to 1.58 × 10 g(HO)/(m d). The data obtained are compared with alternative coating processes using the polymers parylene-C and benzocyclobutene (BCB). The latter shows higher WVTR values of 1.2 × 10 and 1.7 × 10 g(HO)/(m d) compared to the PEALD-PI-2611 systems, indicating lower barrier properties. Two AlO-TiO modifications with low WVTR values have been chosen for encapsulating the CFP substrates and exposing them in a long-time experiment to chemical and mechanical loads in a chamber filled with phosphate-buffered saline at 37 °C, pH 7.3, and a cyclically applied pressure of 160 mbar (∼120 mm Hg). The electrical leakage behavior of the CFP systems is measured and reveals reliable electrical long-term stability far beyond 11 months, highlighting the great potential of PEALD-encapsulated CFPs.
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http://dx.doi.org/10.1021/acsami.2c22513 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea.
For potential application in advanced memory devices such as dynamic random-access memory (DRAM) or NAND flash, nanolaminated indium oxide (In-O) and gallium oxide (Ga-O) films with five different vertical cation distributions were grown and investigated by using a plasma-enhanced atomic layer deposition (PEALD) process. Specifically, this study provides an in-depth examination of how the control of individual layer thicknesses in the nanolaminated (NL) IGO structure impacts not only the physical and chemical properties of the thin film but also the overall device performance. To eliminate the influence of the cation composition ratio and overall thickness on the IGO thin film, these parameters were held constant across all conditions.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Materials Science and Engineering, Tianjin Key Lab for Rare Earth Materials and Applications, Nankai University, Tianjin 300350, China.
For silicon-based devices using dielectric oxides doped with rare earth ions, their electroluminescence (EL) performance relies on the sufficient carrier injection. In this work, the atomic GaO layers are inserted within the Er-doped GeO nanofilms fabricated by atomic layer deposition (ALD). Both Ga(CH) and Ga(CH) could realize the ALD growth of GaO onto the as-deposited GeO nanofilm with unaffected deposition rates.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Spain.
Nanolaminates based on ferroelectric polycrystalline doped HfO have gained interest because those compounds show enhanced functional properties. Here, we achieve coexisting improvement of remanent polarization and dielectric permittivity in wake-up-free epitaxial HfZrO/HfO nanolaminates with different numbers of HfO nanolayers if compared with HfZrO single films of equivalent thickness or other reported polycrystalline nanolaminates. Comprehensive structural characterization reveals that the origin of the enhancement must be the larger amount of the orthorhombic phase in the nanolaminates.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Institute of Chemical Engineering Sciences, Foundation of Research and Technology- Hellas (FORTH/ICE-HT), Stadiou Street, Platani, Patras 26504, Greece.
Due to their outstanding electrical and thermal properties, graphene and related materials have been proposed as ideal candidates for the development of lightweight systems for thermoelectric applications. Recently, the nanolaminate architecture that entails alternation of continuous graphene monolayers and ultrathin polymer films has been proposed as an efficient route for the development of composites with impressive physicochemical properties. In this work, we present a novel layer-by-layer approach for the fabrication of highly ordered, flexible, heat-resistant, and electrically conductive freestanding graphene/polymer nanolaminates through alternating Marangoni-driven self-assembly of reduced graphene oxide (rGO) and poly(ether imide) (PEI) films.
View Article and Find Full Text PDFMaterials (Basel)
December 2024
School of Materials Science and Engineering, Tianjin University, Tianjin 300350, China.
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