The mechanism of Sn and Nb influence on the fraction of tetragonal ZrO in oxide films on Zr alloys and their influence mechanism on corrosion resistance of Zr alloys, despite decades of research, are ambiguous due to the lack of kinetic knowledge of phase evolution of ZrO with doping. Using stochastic surface walking and density functional theory calculations, we investigate the influence of Nb and Sn on the stability of tetragonal (t) and monoclinic (m) ZrO, and t-m phase transition in oxide films. We found that though Nb and Sn result in similar apparent variation trends in the t-phase fraction in oxide films, their influences on t-m phase transition differ significantly, which is the underlying origin of different influences of the t-phase fraction in oxide films on the corrosion resistance of Zr alloys with Sn and Nb alloying. These results clarify an important aspect of the relationship between the microstructure and corrosion resistance of Zr alloys.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1039/d2cp05345d | DOI Listing |
Nano Lett
January 2025
Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, PO Box 1048 Blindern, N-0316 Oslo, Norway.
Polymorphism determines significant variations in materials' properties by lattice symmetry variation. If they are stacked together into multilayers, polymorphs may work as an alternative approach to the sequential deposition of layers with different chemical compositions. However, selective polymorph crystallization during conventional thin film synthesis is not trivial; changes of temperature or pressure when switching from one polymorph to another during synthesis may cause degradation of the structural quality.
View Article and Find Full Text PDFNano Lett
January 2025
Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
Realizing field-free switching of perpendicular magnetization by spin-orbit torques is crucial for developing advanced magnetic memory and logic devices. However, existing methods often involve complex designs or hybrid approaches, which complicate fabrication and affect device stability and scalability. Here, we propose a novel approach using -polarized spin currents for deterministic switching of perpendicular magnetization through interfacial engineering.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
January 2025
Material Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Lemont, Illinois, 60439, United States.
Exposure of soft material templates to alternating volatile chemical precursors can produce inorganic deposition within the permeable template (e.g. a polymer thin film) in a process akin to atomic layer deposition (ALD).
View Article and Find Full Text PDFAngew Chem Int Ed Engl
January 2025
University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices, No. 2006, Xiyuan Avenue, High-tech Zone (West Area), 610054, Chengdu, CHINA.
Bismuth oxide (Bi2O3) emerges as a potent catalyst for converting CO2 to formic acid (HCOOH), leveraging its abundant lattice oxygen and the high activity of its Bi-O bonds. Yet, its durability is usually impeded by the loss of lattice oxygen causing structure alteration and destabilized active bonds. Herein, we report an innovative approach via the interstitial incorporation of indium (In) into the Bi2O3, significantly enhancing bond stability and preserving lattice oxygen.
View Article and Find Full Text PDFSmall
January 2025
School of Energy and Power Engineering, Beihang University, Beijing, 100191, China.
The manufacturing of thin films through selective laser sintering of micro/nanoparticles is an emerging technology that has been developing rapidly over the last two decades owing to its digitization, efficiency, and good adaptability to various materials. However, high-quality laser sintering of different materials remains a challenge: ceramic particles are difficult to be sintered due to low absorbance; metallic particles are prone to oxidation; semiconductor particles are difficult to process for performance enhancement due to high stress. In this work, a new approach is proposed that employs an additional Indium Tin Oxide (ITO) sacrificial layer to assist laser sintering of different functional materials, which detaches after sintering without contaminating the target material.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!