In this paper, we propose an optically controlling broadband terahertz modulator of a layer-dependent PtSe nanofilm based on a high-resistance silicon substrate. Through optical pump and terahertz probe system, the results show that compared with 6-, 10-, and 20-layer films, a 3-layer PtSe nanofilm has better surface photoconductivity in the terahertz band and has a higher plasma frequency of 0.23 THz and a lower scattering time of 70 fs by Drude-Smith fitting. By the terahertz time-domain spectroscopy system, the broadband amplitude modulation of a 3-layer PtSe film in the range of 0.1-1.6 THz was obtained, and the modulation depth reached 50.9% at a pump density of 2.5 W/cm. This work proves that PtSe nanofilm devices are suitable for terahertz modulators.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10005757 | PMC |
| http://dx.doi.org/10.3390/nano13050795 | DOI Listing |
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