Knowing the dielectric properties of the interfacial region in polymer nanocomposites is critical to predicting and controlling dielectric properties. They are, however, difficult to characterize due to their nanoscale dimensions. Electrostatic force microscopy (EFM) provides a pathway to local dielectric property measurements, but extracting local dielectric permittivity in complex interphase geometries from EFM measurements remains a challenge. This paper demonstrates a combined EFM and machine learning (ML) approach to measuring interfacial permittivity in 50 nm silica particles in a PMMA matrix. We show that ML models trained to finite-element simulations of the electric field profile between the EFM tip and nanocomposite surface can accurately determine the interface permittivity of functionalized nanoparticles. It was found that for the particles with a polyaniline brush layer, the interfacial region was detectable (extrinsic interface). For bare silica particles, the intrinsic interface was detectable only in terms of having a slightly higher or lower permittivity. This approach fully accounts for the complex interplay of filler, matrix, and interface permittivity on the force gradients measured in EFM that are missed by previous semianalytic approaches, providing a pathway to quantify and design nanoscale interface dielectric properties in nanodielectric materials.
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http://dx.doi.org/10.1021/acsaelm.2c01331 | DOI Listing |
Sci Rep
December 2024
Condensed Matter Theory Group, School of Studies in Physics, Jiwaji University, Gwalior, 474 011, India.
This study presents a comprehensive investigation into the intrinsic properties of RNiP (where R = Sm, Eu) filled skutterudite, employing the full-potential linearized augmented plane wave method within density functional theory (DFT) simulations using the WIEN2k framework. Structural, phonon stability, mechanical, electronic, magnetic, transport, thermal, and optical properties are thoroughly explored to provide a holistic understanding of these materials. Initially, the structural stability of SmNiP and EuNiP is rigorously evaluated through ground-state energy calculations obtained from structural optimizations, revealing a preference for a stable ferromagnetic phase over competing antiferromagnetic and non-magnetic phases.
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December 2024
Key Laboratory of Advanced Polymeric Materials of Shanghai, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, P. R. China.
As integrated circuits have developed towards the direction of complexity and miniaturization, there is an urgent need for low dielectric constant materials to effectively realize high-fidelity signal transmission. However, there remains a challenge to achieve ultralow dielectric constant and ultralow dielectric loss over a wide temperature range, not to mention having excellent thermal conductivity and processability concurrently. We herein prepare dual-linker freestanding covalent organic framework films with tailorable fluorine content via interfacial polymerization.
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December 2024
Department of Materials Science and NanoEngineering and the Rice Advanced Materials Institute, Rice University, Houston, TX, 77005, USA.
As the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-k dielectric (k < 2) materials need to be developed to replace current silicon dioxide (k = 3.9) or SiCOH, etc.
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December 2024
Engineering Science and Mechanics, Penn State University, University Park, PA, USA.
Incipient ferroelectricity bridges traditional dielectrics and true ferroelectrics, enabling advanced electronic and memory devices. Firstly, we report incipient ferroelectricity in freestanding SrTiO nanomembranes integrated with monolayer MoS to create multifunctional devices, demonstrating stable ferroelectric order at low temperatures for cryogenic memory devices. Our observation includes ultra-fast polarization switching (~10 ns), low switching voltage (<6 V), over 10 years of nonvolatile retention, 100,000 endurance cycles, and 32 conductance states (5-bit memory) in SrTiO-gated MoS transistors at 15 K and up to 100 K.
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December 2024
Shaanxi Key Laboratory of Macromolecular Science and Technology, School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, 710072, P. R. China.
The demand for temperature-robust electromagnetic wave (EMW) absorption materials is escalating due to the varying operational temperatures of electronic devices, which can easily soar up to 100 °C, significantly affecting EMW interference management. Traditional absorbers face performance degradation across broad temperature ranges due to alterations in electronic mobility and material impedance. This study presented a novel approach by integrating semiconductor metal-organic frameworks (SC-MOFs) with paraffin wax (PW), leveraging the precise control of interlayer spacing in SC-MOFs for electron mobility regulation and the introduction of paraffin wax for temperature-inert electromagnetic properties.
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