AI Article Synopsis
- Researchers developed photodetectors using vertical multi-walled carbon nanotube (MWCNT) films on n-type silicon substrates that have a silicon nitride (SiN) coating.
- Higher photocurrent measurements indicate improved photo detection in areas with thinner MWCNT films, achieving close to 100% external quantum efficiency.
- A practical method involving scotch tape is suggested to adjust the thickness and density of the MWCNT films, leading to enhanced photo-response in the devices.
Article Abstract
Photodetectors based on vertical multi-walled carbon nanotube (MWCNT) film-Si heterojunctions are realized by growing MWCNTs on n-type Si substrates with a top surface covered by SiN layers. Spatially resolved photocurrent measurements reveal that higher photo detection is achieved in regions with thinner MWCNT film, where nearly 100% external quantum efficiency is achieved. Hence, we propose a simple method based on the use of scotch tape with which to tune the thickness and density of as-grown MWCNT film and enhance device photo-response.
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Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9967656 | PMC |
| http://dx.doi.org/10.3390/nano13040650 | DOI Listing |
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