Ground-State Structure of Quaternary Alloys (SiC) (AlN) and (SiC) (GaN).

Despite III-nitride and silicon carbide being the materials of choice for a wide range of applications, theoretical studies on their quaternary alloys are limited. Here, we report a systematic computational study on the electronic structural properties of (SiC) (AlN) and (SiC) (AlN) quaternary alloys, based on state-of-the-art first-principles evolutionary algorithms. Trigonal (SiCAlN, space group 3m1) and orthorhombic (SiCGaN, space group mn2) crystal phases were as predicted for = 0.5. SiCAlN showed relatively weak thermodynamic instability, while that of SiCGaN was slightly elevated, rendering them both dynamically and mechanically stable at ambient pressure. Our calculations revealed that the m31 crystal has high elastic constants, (~458 GPa and ~447 GPa), a large bulk modulus (~210 GPa), and large Young's modulus (~364 GPa), and our results suggest that SiCAlN is potentially a hard material, with a Vickers hardness of 21 GPa. Accurate electronic structures of SiCAlN and SiCGaN were calculated using the Tran-Blaha modified Becke-Johnson semi-local exchange potential. Specifically, we found evidence that SiCGaN has a very wide direct bandgap of 3.80 eV, while that of SiCAlN was indirect at 4.6 eV. Finally, for the quaternary alloys, a relatively large optical bandgap bowing of ~3 eV was found for SiCGaN, and a strong optical bandgap bowing of 0.9 eV was found for SiCAlN.