AI Article Synopsis
- High open-circuit voltage in SbSe solar cells poses challenges for creating eco-friendly solar technology, as current methods use CdS layers that raise environmental concerns due to cadmium toxicity.
- This research introduces a ZnO-based buffer layer with a polymer film on top to replace the toxic CdS, which significantly boosts solar cell performance, achieving an open-circuit voltage increase from 243 mV to 344 mV.
- The study highlights the effectiveness of using branched polyethylenimine at the ZnO interface, yielding a maximum solar cell efficiency of 2.4% and laying the groundwork for further advancements in the field of chalcogenide photovoltaics.
Article Abstract
High open-circuit voltage in SbSe thin-film solar cells is a key challenge in the development of earth-abundant photovoltaic devices. CdS selective layers have been used as the standard electron contact in this technology. Long-term scalability issues due to cadmium toxicity and environmental impact are of great concern. In this study, we propose a ZnO-based buffer layer with a polymer-film-modified top interface to replace CdS in SbSe photovoltaic devices. The branched polyethylenimine layer at the ZnO and transparent electrode interface enhanced the performance of SbSe solar cells. An important increase in open-circuit voltage from 243 mV to 344 mV and a maximum efficiency of 2.4% was achieved. This study attempts to establish a relation between the use of conjugated polyelectrolyte thin films in chalcogenide photovoltaics and the resulting device improvements.
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Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9964030 | PMC |
| http://dx.doi.org/10.3390/ijms24043088 | DOI Listing |
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