Growth, structure, and morphology of van der Waals epitaxy CrTe films.

Discov Nano

Engineering Research Center of Micro-Nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, and Department of Physics, Xiamen University, Xiamen, 361005, People's Republic of China.

Published: February 2023

The preparation of two-dimensional magnetic materials is a key process to their applications and the study of their structure and morphology plays an important role in the growth of high-quality thin films. Here, the growth, structure, and morphology of CrTe films grown by molecular beam epitaxy on mica with variations of Te/Cr flux ratio, growth temperature, and film thickness have been systematically investigated by scanning tunneling microscopy, reflection high-energy electron diffraction, scanning electron microscope, and X-ray photoelectron spectroscopy. We find that a structural change from multiple phases to a single phase occurs with the increase in growth temperature, irrespective of the Cr/Te flux ratios, which is attributed to the desorption difference of Te atoms at different temperatures, and that the surface morphology of the films grown at relatively high growth temperatures (≥ 300 °C) exhibits a quasi-hexagonal mesh-like structure, which consists of nano-islands with bending surface induced by the screw dislocations, as well as that the films would undergo a growth-mode change from 2D at the initial stage in a small film thickness (2 nm) to 3D at the later stage in thick thicknesses (12 nm and 24 nm). This work provides a general model for the study of pseudo-layered materials grown on flexible layered substrates.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9958219PMC
http://dx.doi.org/10.1186/s11671-023-03791-yDOI Listing

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