Direct Photo-Patterning of Efficient and Stable Quantum Dot Light-Emitting Diodes via Light-Triggered, Carbocation-Enabled Ligand Stripping.

Nano Lett

Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China.

Published: March 2023

AI Article Synopsis

  • Next generation QLED displays need better methods for patterning quantum dot layers to improve performance.
  • The new CELS technique uses light-activated carbocations to efficiently strip ligands from quantum dots, creating precise microscale patterns while maintaining their luminescence.
  • CELS-patterned QLEDs achieve high external quantum efficiencies (up to 19.1% for red) and a long lifespan of 8700 hours at 1000 nits, rivaling traditional devices and showing potential for advanced display technology.

Article Abstract

Next generation displays based on quantum dot light-emitting diodes (QLEDs) require robust patterning methods for quantum dot layers. However, existing patterning methods mostly yield QLEDs with performance far inferior to the state-of-the-art individual devices. Here, we report a light-triggered, carbocation-enabled ligand stripping (CELS) approach to pattern QLEDs with high efficiency and stability. During CELS, photogenerated carbocations from triphenylmethyl chlorides remove native ligands of quantum dots, thereby producing patterns at microscale precision. Chloride anions passivate surface defects and endow patterned quantum dots with preserved photoluminescent quantum yields. It works for both cadmium-based and heavy-metal-free quantum dots. CELS-patterned QLEDs show remarkable external quantum efficiencies (19.1%, 17.5%, 12.0% for red, green, blue, respectively) and a long operation lifetime ( at 1000 nits up to 8700 h). Both are among the highest for patterned QLEDs and approach the records for nonpatterned devices, which makes CELS promising for building high-performance QLED displays and related integrated devices.

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Source
http://dx.doi.org/10.1021/acs.nanolett.3c00146DOI Listing

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