Using density functional theory in conjunction with many-body perturbation theory, we theoretically investigated the electronic structures of monolayers germanane and silicane in an applied out-of-plane uniform electric field. Our results show that although the band structures of both monolayers are affected by the electric field, the band gap width cannot be reduced to zero even for high field-strengths. Moreover, excitons are shown to be robust under electric fields, so that Stark shifts for the fundamental exciton peak is only of the order of a few meV for fields of 1 V Å. The electric field has also no significant effect on electron probability distribution, as the exciton dissociation into free electron-hole pairs is not observed even at high electric field strengths. Franz-Keldysh effect is also studied in monolayers germanane and silicane. We found that, due to the shielding effect, the external field is prevented to induce absorption in the spectral region below the gap and only above-gap oscillatory spectral features are allowed. One can benefit from such a characteristic where the absorption near the band edge is not altered by the presence of an electric field, especially since these materials have excitonic peaks in the visible range.
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http://dx.doi.org/10.1088/1361-648X/acbe25 | DOI Listing |
J Am Chem Soc
January 2025
Department of Polymer Science and Engineering, University of Massachusetts, Amherst, Massachusetts 01003, United States.
Direct translocation of RNA with secondary structures using single-molecule electrophoresis through protein nanopores shows significant fluctuations in the measured ionic current, in contrast to unstructured single-stranded RNA or DNA. We developed a multiscale model combining the oxRNA model for RNA with the 3-dimensional Poisson-Nernst-Planck formalism for electric fields within protein pores, aiming to map RNA conformations to ionic currents as RNA translocates through three protein nanopores: α-hemolysin, CsgG, and MspA. Our findings reveal three distinct stages of translocation (pseudoknot, melting, and molten globule) based on contact maps and current values.
View Article and Find Full Text PDFAdv Mater
January 2025
Department of Nano Engineering, Department of Nano Science and Technology, Sungkyunkwan University Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Seobu-ro 2066, Jangan-gu, Suwon, 16419, Republic of Korea.
Carbon nanotubes (CNTs) produced by the floating-catalyst chemical vapor deposition (FCCVD) method are among the most promising nanomaterials of today, attracting interest from both academic and industrial sectors. These CNTs exhibit exceptional electrical conductivity, optical properties, and mechanical resilience due to their binder-free and low-defect structure, while the FCCVD method enables their continuous and scalable synthesis. Among the methodological FCCVD variations, aerosol CVD' is distinguished by its production of freestanding thin films comprising macroscale CNT networks, which exhibit superior performance and practical applicability.
View Article and Find Full Text PDFSmall
January 2025
Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China.
In this study an (AlGa)O barrier layer is inserted between β-GaO and GaN in a p-GaN/n-GaO diode photodetector, causing the dark current to decrease considerably, and device performance to improve significantly. The β-GaO/β-(AlGa)O/GaN n-type/Barrier/p-type photodetector achieves a photocurrent gain of 1246, responsivity of 237 A W, and specific detectivity of 5.23 × 10 cm Hz W under a bias of -20 V.
View Article and Find Full Text PDFAdv Mater
January 2025
Department of Applied Physics, University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan.
Antiferromagnets with broken time-reversal ( ) symmetry ( -odd antiferromagnets) have gained extensive attention, mainly due to their ferromagnet-like behavior despite the absence of net magnetization. However, certain types of -odd antiferromagnets remain inaccessible by the typical ferromagnet-like phenomena (e.g.
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January 2025
Central Research Institute, BOE Technology Group Co. Ltd, Beijing, 100176, China.
For quantum-dot light-emitting diodes (QLED), electrical aging commonly introduces collective aging sources across all layers, making it difficult to isolate the impact of each layer on electroluminescence (EL) degradation. In this work, a layer-selective aging method using active photoexcitation is proposed, in which the photoexcitation wavelength is used to selectively target specific layers for exciton generation, and an electrical bias is applied to induce photocurrent and create charges. An iterative aging-sampling (A-S) procedure is used to link aging conditions to EL degradation.
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