An interlayer spacing design approach for efficient sodium ion storage in N-doped MoS.

MoS in a graphene-like structure that possesses a large interlayer spacing is a promising anode material for sodium ion batteries (SIBs). However, its poor cycling stability and bad rate performance limit its wide application. In this work, we synthesized an N-doped rGO/MoS (ISE, interlayer spacing enlarged) composite based on an innovative strategy to serve as an anode material for SIBs. By inserting NH into the interlayer of MoS, the interlayer spacing of MoS was successfully expanded to 0.98 nm. Further use of N plasma treatment achieved the doping of N element. The results show that N-rGO/MoS(ISE) exhibits a high specific capacity of 542 mA h g after 300 cycles at 200 mA g. It is worth mentioning that the capacity retention rate reaches an ultra-large percentage of 97.13%, and the average decline percentage per cycle is close to 0.01%. Moreover, it also presents an excellent rate performance (477, 432, 377, 334 mA h g at 200, 500, 1000, 2000 m A g respectively). This work reveals a unique approach to fabricating promising anode materials and the electrochemical reaction mechanism for SIBs.