Low-temperature deposited polycrystalline silicon waveguides are emerging as a flexible platform that allows for dense optoelectronic integration. Here, the optical transmission properties of poly-silicon waveguides have been characterized from the near-to-mid-infrared wavelength regime, extending the optical transmission well beyond previous reports in the telecom band. The poly-Si waveguides with a dimension of 3 µm × ∼0.6 µm have been produced from pre-patterned amorphous silicon waveguides that are post-processed through laser melting, reflowing, and crystallization using a highly localized laser induced heat treatment at a wavelength of 532 nm. Low optical transmission losses (<3 dB cm) have been observed at 1.55 µm as well as across the wavelength range of 2-2.25 µm, aided by the relatively large waveguide heights that are enabled by the deposition process. The results demonstrate the suitability of low-temperature poly-silicon waveguides to find wide ranging applications within integrated mid-infrared systems.
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http://dx.doi.org/10.1364/OE.473474 | DOI Listing |
Sci Rep
January 2025
MOE Key Laboratory of Laser Life Science, Institute of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou, 510631, China.
We integrate monolayer TMDCs into silicon-on-insulation (SOI) waveguides and dielectric-loaded surface plasmon polariton (DLSPP) waveguides to enhance nonlinear parameters (γ) of silicon-based waveguides. By optimizing the waveguide geometry, we have achieved significantly improved γ. In MoSe-on-SOI and MoSe-in-DLSPP waveguide with optimized geometry, the maximum γ at the excitonic resonant peak (λ) is 5001.
View Article and Find Full Text PDFNat Commun
January 2025
State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310058, China.
The continuous push for high-performance photonic switches is one of the most crucial premises for the sustainable scaling of programmable and reconfigurable photonic circuits for a wide spectrum of applications. Conventional optical switches rely on the perturbative mechanisms of mode coupling or mode interference, resulting in inherent bottlenecks in their switching performance concerning size, power consumption and bandwidth. Here we propose and realize a silicon photonic 2×2 elementary switch based on a split waveguide crossing (SWX) consisting of two halves.
View Article and Find Full Text PDFNat Commun
January 2025
State Key Laboratory for Extreme Photonics and Instrumentation, Center for Optical & Electromagnetic Research, College of Optical Science and Engineering, International Research Center for Advanced Photonics (Haining), Zhejiang University, Hangzhou, China.
Silicon photonic signal processors promise a new generation of signal processing hardware with significant advancements in processing bandwidth, low power consumption, and minimal latency. Programmable silicon photonic signal processors, facilitated by tuning elements, can reduce hardware development cycles and costs. However, traditional programmable photonic signal processors based on optical switches face scalability and performance challenges due to control complexity and transmission losses.
View Article and Find Full Text PDFNature
January 2025
imec, Leuven, Belgium.
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute and sense the world. However, the lack of highly scalable, native complementary metal-oxide-semiconductor (CMOS)-integrated light sources is one of the main factors hampering its widespread adoption. Despite considerable progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integration by direct epitaxy of III-V materials remains the pinnacle of cost-effective on-chip light sources.
View Article and Find Full Text PDFWe demonstrate a hybrid integrated optical frequency comb amplifier composed of a silicon carbide microcomb and a lithium niobate waveguide amplifier, which generates a 10-dB on-chip gain for the C+L band microcombs under 1480-nm laser pumping and an 8-dB gain under 980-nm laser pumping. It will solve the problem of low output power of microcombs and can be applied in various scenarios such as optical communication, lidar, optical computing, astronomical detection, atomic clocks, and more.
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