AI Article Synopsis
- Researchers have successfully synthesized large-scale ferroelectric InSe films using a chemical vapor deposition method, resulting in centimeter-sized films that are uniform and 5 nm thick with strong ferroelectric properties at room temperature.
- Analysis through scanning transmission electron microscopy and Raman spectroscopy confirms that the films are high-quality 2H stacking α-InSe, which is promising for electronic applications.
- Electronic transport measurements indicate a current-voltage hysteresis effect linked to the switchable Schottky barrier height, driven by the interplay between interface charge transfer and polarized charge, highlighting potential uses in advanced nanoelectronics.
Article Abstract
Two-dimensional (2D) ferroelectric materials have attracted intensive attention in recent years for academic research. However, the synthesis of large-scale 2D ferroelectric materials for electronic applications is still challenging. Here, we report the successful synthesis of centimeter-scale ferroelectric InSe films by selenization of InO in a confined space chemical vapor deposition method. The as-grown homogeneous thin film has a uniform thickness of 5 nm with robust out-of-plane ferroelectricity at room temperature. Scanning transmission electron microscopy and Raman spectroscopy reveal that the thin film is 2H stacking α-InSe with excellent crystalline quality. Electronic transport measurements of InSe highlight the current-voltage hysteresis and polarization modulated diode effect due to the switchable Schottky barrier height (SBH). First-principles calculations reveal that the polarization modulated SBH is originated from the competition between interface charge transfer and polarized charge. The large area growth of epitaxial InSe opens up potential applications of InSe in novel nanoelectronics.
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| http://dx.doi.org/10.1021/acs.nanolett.2c04289 | DOI Listing |
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