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| http://dx.doi.org/10.3762/bjnano.14.9 | DOI Listing |
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Selenium Interface Layers Boost High Mobility and Switch Ratios in van der Waals Electronics.
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Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai 200433, China.
Achieving high mobility while minimizing off-current and static power consumption is critical for applications of two-dimensional field-effect transistors. Herein, a selenium (Se) sacrificial layer is introduced between the rhenium sulfide (ReS) semiconductor and source/drain electrode. With the Se layer and postannealing process, the ReS transistor significantly decreases the off-state current with a substantial increase in the on-state current density.
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State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China.
Ferroelectric semiconductors have the advantages of switchable polarization ferroelectric field regulation and semiconductor transport characteristics, which are highly promising in ferroelectric transistors and nonvolatile memory. However, it is difficult to prepare a Sn-based perovskite film with both robust ferroelectric and semiconductor properties. Here, by doping with 2-methylbenzimidazole, Sn-based perovskite [93.
View Article and Find Full Text PDFRemote epitaxy and exfoliation of vanadium dioxide via sub-nanometer thick amorphous interlayer.
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Department of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200438, People's Republic of China.
The recently emerged remote epitaxy technique, utilizing 2D materials (mostly graphene) as interlayers between the epilayer and the substrate, enables the exfoliation of crystalline nanomembranes from the substrate, expanding the range of potential device applications. However, remote epitaxy has been so far applied to a limited range of material systems, owing to the need of stringent growth conditions to avoid graphene damaging, and has therefore remained challenging for the synthesis of oxide nanomembranes. Here, we demonstrate the remote epitaxial growth of an oxide nanomembrane (vanadium dioxide, VO) with a sub-nanometer thick amorphous interlayer, which can withstand potential sputtering-induced damage and oxidation.
View Article and Find Full Text PDFFerroelectric Domain Wall Warp Memristor.
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School of Materials Science and Engineering, UNSW Sydney, NSW 2052, Australia.
Domain walls are quasi-one-dimensional topological defects in ferroic materials, which can harbor emergent functionalities. In the case of ferroelectric domain wall (FEDW) devices, an exciting frontier has emerged: memristor-based information storage and processing approaches. Memristor solid-state FEDW devices presented thus far, however predominantly utilize a complex network of domain walls to achieve the desired regulation of density and charge state.
View Article and Find Full Text PDFCurrent-Driven to Thermally Driven Multistep Phase Transition of Charge Density Wave Order in 1T-TaS.
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State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, China.
Two-dimensional 1T-TaS is renowned for its exotic physical properties including superconductivity, Mott physics, flat-band electronics, and charge density wave (CDW) orders. In particular, the CDW phase transitions (PTs) in 1T-TaS attracted extensive research interest, showing prominent potential in electronic devices. However, mechanisms underlying electrically driven PTs remain elusive.
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