Ag-doped InP/ZnS quantum dots for type-I photosensitizers.

Chem Commun (Camb)

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.

Published: February 2023

Water-soluble Ag-doped InP/ZnS quantum dots (QDs) with high photoluminescence quantum yield were synthesized and characterized. Their maximum two- and three-photon absorption cross sections are determined as ∼1.7 × 10 GM at 820 nm and ∼1.7 × 10 cm s photon at 1260 nm. Importantly, for the first time, we demonstrated that Ag-doped InP/ZnS QDs can be used for type-I photodynamic therapy and are more suitable for the hypoxic environment of tumors.

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http://dx.doi.org/10.1039/d2cc06119hDOI Listing

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Ag-doped InP/ZnS quantum dots for type-I photosensitizers.

Chem Commun (Camb)

February 2023

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.

Water-soluble Ag-doped InP/ZnS quantum dots (QDs) with high photoluminescence quantum yield were synthesized and characterized. Their maximum two- and three-photon absorption cross sections are determined as ∼1.7 × 10 GM at 820 nm and ∼1.

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