Ferroelectric control of single-molecule magnetism in 2D limit.

Sci Bull (Beijing)

Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China. Electronic address:

Published: August 2020

AI Article Synopsis

  • The study explores how the magnetoelectric effect can be used to control magnetic properties for future data storage devices, allowing for the switching of magnetic states through electric fields.
  • First-principles calculations show that changing the electric polarization of a 2D ferroelectric substrate (α-InSe) affects the magnetic properties of metal-phthalocyanine molecules (MPc), specifically OsPc.
  • The findings indicate that by modifying the system with functionalized atoms, the magnetic moments and magnetic anisotropy energies can be significantly enhanced, making this technique potentially useful for nanoscale electronics and spintronics at room temperature.

Article Abstract

The electric control of magnetic properties based on magnetoelectric effect is crucial for the development of future data storage devices. Here, based on first-principles calculations, a strong magnetoelectric effect is proposed to effectively switch on/off the magnetic states as well as alter the in-plane/perpendicular easy axes of metal-phthalocyanine molecules (MPc) by reversing the electric polarization of the underlying two-dimensional (2D) ferroelectric α-InSe substrate with the application of an external electric field. The mechanism originates from the different hybridization between the molecule and the ferroelectric substrate in which the different electronic states of surface Se layer play a dominant role. Moreover, the magnetic moments and magnetic anisotropy energies (MAE) of OsPc/InSe can be further largely enhanced by a functionalized atom atop the OsPc molecule. The I-OsPc/InSe system possesses large MAE up to 30 meV at both polarization directions, which is sufficient for room-temperature applications. These findings provide a feasible scheme to realize ferroelectric control of magnetic states in 2D limit, which have great potential for applications in nanoscale electronics and spintronics.

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Source
http://dx.doi.org/10.1016/j.scib.2020.04.014DOI Listing

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