The electric control of magnetic properties based on magnetoelectric effect is crucial for the development of future data storage devices. Here, based on first-principles calculations, a strong magnetoelectric effect is proposed to effectively switch on/off the magnetic states as well as alter the in-plane/perpendicular easy axes of metal-phthalocyanine molecules (MPc) by reversing the electric polarization of the underlying two-dimensional (2D) ferroelectric α-InSe substrate with the application of an external electric field. The mechanism originates from the different hybridization between the molecule and the ferroelectric substrate in which the different electronic states of surface Se layer play a dominant role. Moreover, the magnetic moments and magnetic anisotropy energies (MAE) of OsPc/InSe can be further largely enhanced by a functionalized atom atop the OsPc molecule. The I-OsPc/InSe system possesses large MAE up to 30 meV at both polarization directions, which is sufficient for room-temperature applications. These findings provide a feasible scheme to realize ferroelectric control of magnetic states in 2D limit, which have great potential for applications in nanoscale electronics and spintronics.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1016/j.scib.2020.04.014 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
Department of Materials Science, National Engineering Lab for TFT-LCD Materials and Technologies, Fudan University, Shanghai 200433, China.
Tactile sensation and recognition in the human brain are indispensable for interaction between the human body and the surrounding environment. It is quite significant for intelligent robots to simulate human perception and decision-making functions in a more human-like way to perform complex tasks. A combination of tactile piezoelectric sensors with neuromorphic transistors provides an alternative way to achieve perception and cognition functions for intelligent robots in human-machine interaction scenarios.
View Article and Find Full Text PDFHeliyon
January 2025
National Institute of Materials Physics, 077125 Magurele, Ilfov, Romania.
Non-volatile electronic memory elements are very attractive for applications, not only for information storage but also in logic circuits, sensing devices and neuromorphic computing. Here, a ferroelectric film of guanine nucleobase is used in a resistive memory junction sandwiched between two different ferromagnetic films of Co and CoCr alloys. The magnetic films have an in-plane easy axis of magnetization and different coercive fields whereas the guanine film ensures a very long spin transport length, at 100 K.
View Article and Find Full Text PDFAdv Sci (Weinh)
January 2025
Jožef Stefan Institute, Ljubljana, 1000, Slovenia.
The recent discovery of ferroelectric nematic liquid crystalline phases marks a major breakthrough in soft matter research. An intermediate phase, often observed between the nonpolar and the ferroelectric nematic phase, shows a distinct antiferroelectric response to electric fields. However, its structure and formation mechanisms remain debated, with flexoelectric and electrostatics effects proposed as competing mechanisms.
View Article and Find Full Text PDFAdv Mater
January 2025
Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin, 300350, P. R. China.
Memristors enable non-volatile memory and neuromorphic computing. Optical memristors are the fundamental element for programmable photonic integrated circuits due to their high-bandwidth computing, low crosstalk, and minimal power consumption. Here, an optical memristor enabled by a non-volatile electro-optic (EO) effect, where refractive index modulation under zero field is realized by deliberate control of domain alignment in the ferroelectric material Pb(MgNb)O-PbTiO(PMN-PT) is proposed.
View Article and Find Full Text PDFNano Lett
January 2025
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
In van der Waals (vdW) architectures of transition metal dichalcogenides (TMDCs), the coupling between interlayer exciton and quantum degrees of freedom opens unprecedented opportunities for excitonic physics. Taking the MoSe homobilayer as representative, we identify that the interlayer registry defines the nature and dynamics of the lowest-energy interlayer exciton. The large layer polarization () is proved, which ensures the formation of layer-resolved interlayer excitons.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!