Photoinduced Strain in Organometal Halide Perovskites.

J Phys Chem Lett

Hebei Key Laboratory of Inorganic Nano-materials, College of Chemistry and Materials Science, Hebei Normal University, Shijiazhuang, Hebei050024China.

Published: February 2023

AI Article Synopsis

  • The study explores how light affects the mechanical properties of organometallic halide perovskites (OHPs), specifically looking at a MAPbI film using atomic force microscopy.
  • In the dark, the film has a Young's modulus of 5.94 GPa, which reduces to 2.97 GPa when exposed to light, leading to uneven strain distribution within the material.
  • The research indicates that the changes in mechanical properties under illumination are linked to the movement of MA cations, potentially impacting the understanding of how mechanical, chemical, and optoelectronic properties of OHPs interrelate.

Article Abstract

There is a lack of fundamental understanding of mechano-electro-optical multifield coupling for organometallic halide perovskites (OHPs). In this study, the effect of light irradiation on OHPs' mechanical properties was investigated by atomic force microscopy. In the dark, an MAPbI film was dominated by grains with a Young's modulus of approximately 5.94 GPa, which decreased to 2.97 GPa under light illumination. The photoinduced strain distribution within the polycrystalline MAPbI film was not uniform, and the maximum strain generated inside individual grains was 5.8%. Furthermore, the illumination-induced strain promoted the formation of ferroelastic domains. The Young's modulus of one domain increased from 8.99 to 25.27 GPa, whereas the Young's modulus of an adjacent domain decreased from 14.9 to 1.30 GPa. According to the density-functional-theory calculations, the observed photoinduced strain-promoted variations in mechanical properties were caused by the reversible migration of MA cations. These findings can help establish the relationship among the mechanical-chemical-optoelectronic characteristics of OHPs.

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Source
http://dx.doi.org/10.1021/acs.jpclett.2c03573DOI Listing

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