AI Article Synopsis
- Antiferroelectric thin-film capacitors show promise for energy storage with features like low remanent polarization and fast discharge rates.
- A specific multilayer heterostructure (PbZrO/PbTiO) achieves high energy storage density (36.4 J/cm) and strong electric breakdown strength (2.9 MV/cm).
- The interplay between interfacial blockage and strain defects influences performance, with atomic-scale studies revealing insights into how these factors affect energy storage capabilities.
Article Abstract
Antiferroelectric thin-film capacitors with ultralow remanent polarization and fast discharge speed have attracted extensive attention for energy storage applications. A multilayer heterostructure is considered to be an efficient approach to enhance the breakdown strength and improve the functionality. Here, we report a high-performance multilayer heterostructure (PbZrO/PbTiO) with a maximum recoverable energy storage density of 36.4 J/cm due to its high electric breakdown strength (2.9 MV/cm) through the heterostructure strategy. The positive effect of interfacial blockage and the negative effect of local strain defects competitively affect the breakdown strength, showing an inflection point at = 3. The atomic-scale characterizations reveal the underlying microstructure mechanism of the interplay between the heterointerface dislocations and the decreased energy storage performance. This work offers the potential of well-designed multilayers with high energy storage performance through heterostructure engineering.
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| http://dx.doi.org/10.1021/acsami.2c21202 | DOI Listing |
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