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Colloidal quantum dots (CQDs) are promising for infrared photodetectors with high detectivity and low-cost production. Although CQDs enable photoinduced charge multiplication, thermal noise in low-bandgap materials limits their performance in IR detectors. Here we present a pioneering architecture of a CQD-based infrared photodetector that uses kinetically pumped avalanche multiplication.

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Engineering of Impact Ionization Characteristics in GaAs/GaAsBi Multiple Quantum Well Avalanche Photodiodes.

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The presence of large bismuth (Bi) atoms has been shown to increase the spin-orbit splitting energy in bulk GaAsBi, reducing the hole ionization coefficient (β) and thereby reducing the excess noise seen in avalanche photodiodes. In this study, we show that even very thin layers of GaAsBi introduced as quantum wells (QWs) in a GaAs matrix exhibit a significant reduction of β while leaving the electron ionization coefficient, α, largely unchanged. The optical and avalanche multiplication properties of a series of GaAsBi/GaAs multiple quantum well (MQW) p-i-n structures with nominally 5 nm thick, 4.

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Single-photon detectors (SPDs) are ubiquitous in many protocols for quantum imaging, sensing, and communications. Many of these protocols critically depend on the precise knowledge of their detection efficiency. A method for the calibration of SPDs based on sources of quantum-correlated photon pairs uses single-photon detection to generate heralded single photons, which can be used as a standard of radiation at the single-photon level.

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