Tailoring of the propagation dynamics of exciton-polaritons in two-dimensional quantum materials has shown extraordinary promise to enable nanoscale control of electromagnetic fields. Varying permittivities along crystal directions within layers of material systems, can lead to an in-plane anisotropic dispersion of polaritons. Exploiting this physics as a control strategy for manipulating the directional propagation of the polaritons is desired and remains elusive. Here we explore the in-plane anisotropic exciton-polariton propagation in SnSe, a group-IV monochalcogenide semiconductor that forms ferroelectric domains and shows room-temperature excitonic behaviour. Exciton-polaritons are launched in SnSe multilayer plates, and their propagation dynamics and dispersion are studied. This propagation of exciton-polaritons allows for nanoscale imaging of the in-plane ferroelectric domains. Finally, we demonstrate the electric switching of the exciton-polaritons in the ferroelectric domains of this complex van der Waals system. The study suggests that systems such as group-IV monochalcogenides could serve as excellent ferroic platforms for actively reconfigurable polaritonic optical devices.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1038/s41565-022-01312-z | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Mechanical force-induced interlayer sliding in interfacial ferroelectrics.
Nat Commun
January 2025
Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Moiré superlattices in two-dimensional stacks have attracted worldwide interest due to their unique electronic properties. A typical example is the moiré ferroelectricity, where adjacent moirés exhibit opposite spontaneous polarization that can be switched through interlayer sliding. However, in contrast to ideal regular ferroelectric moiré domains (equilateral triangles) built in most theoretical models, the unavoidable irregular moiré supercells (non-equilateral triangles) induced by external strain fields during the transfer process have been given less attention.
View Article and Find Full Text PDFFerroelectric capacitive memories: devices, arrays, and applications.
Nano Converg
January 2025
Department of Electrical and Computer Engineering, National University of Singapore (NUS), Singapore, 117576, Singapore.
Ferroelectric capacitive memories (FCMs) utilize ferroelectric polarization to modulate device capacitance for data storage, providing a new technological pathway to achieve two-terminal non-destructive-read ferroelectric memory. In contrast to the conventional resistive memories, the unique capacitive operation mechanism of FCMs transfers the memory reading and in-memory computing to charge domain, offering ultra-high energy efficiency, better compatibility to large-scale array, and negligible read disturbance. In recent years, extensive research has been conducted on FCMs.
View Article and Find Full Text PDFReversible Ferroelectric Polarization Modulation of Chiral Molecular Ferroelectrics by Circularly Polarized Light.
Adv Sci (Weinh)
January 2025
Department of Materials Science and Engineering, University of Maryland, College Park, MD, 20742, USA.
The optical modulation of ferroelectric polarization constitutes a transformative, non-contact strategy for the precise manipulation of ferroelectric properties, heralding advancements in optically stimulated ferroelectric devices. Despite its potential, progress in this domain is constrained by material limitations and the intricate nature of the underlying mechanisms. Recent studies have achieved efficient regulation of ferroelectric polarization and thermal conductivity in chiral ferroelectric thin films through the application of left- and right-handed circularly polarized light (LCP and RCP).
View Article and Find Full Text PDFSynergistic spatial separation effect of internal electric field in ALD-generated BiFeO/CuO@Co Z-type heterojunction for enhanced photocatalytic water oxidation.
J Colloid Interface Sci
January 2025
College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, Guangdong 518060, PR China; Guangdong Flexible Wearable Energy and Tools Engineering Technology Research Centre, Shenzhen University, Shenzhen 518060, PR China. Electronic address:
Altering the electron distribution within a catalyst to manipulate internal charge migration pathways is an effective strategy for achieving high efficiency in carrier separation and migration, which is essential for the advancement of photocatalytic water oxidation technologies. We have employed atomic layer deposition (ALD) to construct a BiFeO/CuO (BFO/CuO) heterojunction with a specific CuO thickness, resulting in a Z-type junction (BFO/CuO50) characterized by a robust internal electric field. This junction facilitates the spatial separation of charge carriers, thereby enhancing their migration efficiency.
View Article and Find Full Text PDFLiNbO domain structures have been widely applied in nonlinear beam shaping, quantum light generation, and nonvolatile ferroelectric memory. The recent developments in nanoscale domain engineering techniques make it possible to fabricate sub-diffracted nanodomains in LiNbO crystal for high-speed modulation and high-capacity storage. However, it still lacks a feasible and efficient way to characterize these nanoscale domains.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!