In this work, we successfully demonstrated InGaAs/InAs/InGaAs composite channel metamorphic high electron mobility transistors (mHEMTs) on a GaAs substrate. The fabricated mHEMTs with a 100 nm gate length exhibited excellent DC and logic characteristics such as = -0.13 V, = 949 mS/mm, subthreshold swing (SS) = 84 mV/dec, drain-induced barrier lowering (DIBL) = 89 mV/V, and I/I ratio = 9.8 × 10 at a drain-source voltage () = 0.5 V. In addition, the device exhibited excellent high-frequency characteristics, such as = 261/304 GHz for the measured result and well-matched modeled = 258/309 GHz at = 0.5 V, which is less power consumption compared to other material systems. These high-frequency characteristics are a well-balanced demonstration of and in the mHEMT structure on a GaAs substrate.
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| http://dx.doi.org/10.3390/mi14010056 | DOI Listing |
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