In this Letter, we explore the use of thermodynamic length to improve the performance of experimental protocols. In particular, we implement Landauer erasure on a driven electron level in a semiconductor quantum dot, and compare the standard protocol in which the energy is increased linearly in time with the one coming from geometric optimization. The latter is obtained by choosing a suitable metric structure, whose geodesics correspond to optimal finite-time thermodynamic protocols in the slow driving regime. We show experimentally that geodesic drivings minimize dissipation for slow protocols, with a bigger improvement as one approaches perfect erasure. Moreover, the geometric approach also leads to smaller dissipation even when the time of the protocol becomes comparable with the equilibration timescale of the system, i.e., away from the slow driving regime. Our results also illustrate, in a single-electron device, a fundamental principle of thermodynamic geometry: optimal finite-time thermodynamic protocols are those with constant dissipation rate along the process.
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http://dx.doi.org/10.1103/PhysRevLett.129.270601 | DOI Listing |
Nat Commun
December 2024
Davidson School of Chemical Engineering, Purdue University, West Lafayette, IN, USA.
Metal halide perovskites show promise for next-generation light-emitting diodes, particularly in the near-infrared range, where they outperform organic and quantum-dot counterparts. However, they still fall short of costly III-V semiconductor devices, which achieve external quantum efficiencies above 30% with high brightness. Among several factors, controlling grain growth and nanoscale morphology is crucial for further enhancing device performance.
View Article and Find Full Text PDFAdv Mater
December 2024
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Halide perovskites have emerged as promising materials for a wide variety of optoelectronic applications, including solar cells, light-emitting devices, photodetectors, and quantum information applications. In addition to their desirable optical and electronic properties, halide perovskites provide tremendous synthetic flexibility through variation of not only their chemical composition but also their structure and morphology. At the heart of their use in optoelectronic technologies is the interaction of light with electronic excitations in the form of excitons.
View Article and Find Full Text PDFLangmuir
December 2024
Department of Chemistry, University of Washington, Seattle, Washington 98195, United States.
Circular dichroism (CD) spectroscopy has emerged as a potent tool for probing chiral small-molecule ligand exchange on natively achiral quantum dots (QDs). In this study, we report a novel approach to identifying QD-biomolecule interactions by inducing chirality in CdS QDs using thermoresponsive elastin-like polypeptides (ELPs) engineered with C-terminal cysteine residues. Our method is based on a versatile two-step ligand exchange process starting from monodisperse oleate-capped QDs in nonpolar media and proceeding through an easily accessed achiral glycine-capped QD intermediate.
View Article and Find Full Text PDFChem Biomed Imaging
December 2024
College of Chemistry and Materials Science, Jinan University, Guangzhou, Guangdong 510632, China.
The large-scale preparation of fluorescent nanomaterials with laboratory-relevant chemical and optical properties will greatly forward their consumer market applications; however, it still remains challenging. In this work, a universal strategy was developed for the rapid and large-scale synthesis of fluorescent sulfur quantum dots that recently has drawn great attention because of their unique optical characteristics. From the fact that empty 3d orbitals of sulfide species are able to bind with lone-pair π electrons of the heteroatomic groups, many amino-group containing compounds, such as amino acid and polyethylenimine molecules, were exploited to synthesize sulfur quantum dots.
View Article and Find Full Text PDFACS Appl Electron Mater
December 2024
Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040, Linz, Austria.
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the direct epitaxial growth of two-dimensional high-quality crystalline Ge layers on Si deposited at ultralow growth temperatures ( = 100-350 °C) and pristine growth pressures (≲10 mbar). First, we show that a decreasing does not degrade the crystal quality of homoepitaxial Ge/Ge(001) by comparing the point defect density using positron annihilation lifetime spectroscopy.
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