A three-dimensional self-consistent spin transport model is developed, which includes both tunnelling transport, leading to tunnelling magneto-resistance, as well as metallic transport, leading to giant magneto-resistance. An explicit solution to the drift-diffusion model is also derived, which allows analysing the effect of both the reference and free layer thickness on the spin-transfer torque polarization and field-like coefficient. It is shown the model developed here can be used to compute the signal-to-noise ratio in realistic magnetic read-heads, where spin torque-induced fluctuations and instabilities limit the maximum operating voltage. The effect of metallic pinhole defects in the insulator layer is also analysed. Increasing the area covered by pinholes results in a rapid degradation of the magneto-resistance, following an inverse dependence. Moreover, the spin torque angular dependence becomes skewed, similar to that obtained in fully metallic spin valves, and the spin-transfer torque polarization decreases. The same results are obtained when considering tunnel junctions with a single pinhole defect, but decreasing cross-sectional area, showing that even a single pinhole defect can significantly degrade the performance of tunnel junctions and magnetic read-heads below the 40 nm node.
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http://dx.doi.org/10.1088/1361-648X/acb2a6 | DOI Listing |
J Phys Chem B
January 2025
Department of Chemistry, Indian Institute of Technology (IIT) Indore, Indore, Madhya Pradesh 453552, India.
Artificially synthesized DNA holds significant promise in addressing fundamental biochemical questions and driving advancements in biotechnology, genetics, and DNA digital data storage. Rapid and precise electric identification of these artificial DNA strands is crucial for their effective application. Herein, we present a comprehensive investigation into the electric recognition of eight artificial synthesized DNA (DNA and DNA) nucleobases using quantum tunneling transport and machine learning (ML) techniques.
View Article and Find Full Text PDFNat Commun
January 2025
CNR Nanotec, Institute of Nanotechnology, via Monteroni, 73100, Lecce, Italy.
Macroscopic coherence in quantum fluids allows the observation of interference effects in their wavefunctions, and enables applications such as superconducting quantum interference devices based on Josephson tunneling. The Josephson effect manifests in both fermionic and bosonic systems, and has been well studied in superfluid helium and atomic Bose-Einstein condensates. In exciton-polariton condensates-that offer a path to integrated semiconductor platforms-creating weak links in ring geometries has so far remained challenging.
View Article and Find Full Text PDFACS Nano
January 2025
School of Chemistry, Beihang University, Beijing 100191, China.
Two-dimensional (2D) ferromagnetic materials are subjects of intense research owing to their intriguing physicochemical properties, which hold great potential for fundamental research and spintronic applications. Specifically, 2D van der Waals (vdW) ferromagnetic materials retain both structural integrity and chemical stability even at the monolayer level. Moreover, due to their atomic thickness, these materials can be easily manipulated by stacking them with other 2D vdW ferroic and nonferroic materials, enabling precise control over their physical properties and expanding their functional applications.
View Article and Find Full Text PDFAdv Mater
January 2025
Faculty of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa, 252-5258, Japan.
Twistronics, a novel engineering approach involving the alignment of van der Waals (vdW) integrated two-dimensional materials at specific angles, has recently attracted significant attention. Novel nontrivial phenomena have been demonstrated in twisted vdW junctions (the so-called magic angle), such as unconventional superconductivity, topological phases, and magnetism. However, there have been only few reports on integrated vdW layers with large twist angles θ, such as twisted interfacial Josephson junctions using high-temperature superconductors.
View Article and Find Full Text PDFSci Rep
January 2025
College of Science, Xuchang University, Xuchang, 461000, China.
Spin and valley polarizations (P and P) and tunneling magnetoresistance (TMR) are demonstrated in the ferromagnetic/barrier/normal/barrier/ferromagnetic WSe junction, with the gate voltage and off-resonant circularly polarized light (CPL) applied to the two barrier regions. The minimum incident energy of non-zero spin- and valley-resolved conductance has been derived, which is consistent with numerical calculations and depends on the electric potential U, CPL intensity ΔΩ, exchange field h, and magnetization configuration: parallel (P) or antiparallel (AP). For the P (AP) configuration, the energy region with P = -1 or P = 1 is wider (narrower) and increases with ΔΩ.
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