AI Article Synopsis
- * Analysis showed that the MoS film has high homogeneity, superior electrical and optical characteristics, and the orientation of the crystal is affected by growth temperature.
- * The study highlights that for effective MoS growth on sapphire, it's crucial to control the substrate surface to achieve a half-Al-terminated condition, providing insights for future developments in epitaxial growth of materials.
Article Abstract
A highly reproducible route for the epitaxial growth of single-crystalline monolayer MoS on a C-plane sapphire substrate was developed using vapor-pressure-controllable inorganic molecular precursors MoOCl and HS. Microscopic, crystallographic, and spectroscopic analyses indicated that the epitaxial MoS film possessed outstanding electrical and optical properties, excellent homogeneity, and orientation selectivity. The systematic investigation of the effect of growth temperature on the crystallographic orientations of MoS revealed that the surface termination of the sapphire substrate with respect to the growth temperature determines the crystallographic orientation selectivity of MoS. Our results suggest that controlling the surface to form a half-Al-terminated surface is a prerequisite for the epitaxial growth of MoS on a C-plane sapphire substrate. The insights on the growth mechanism, especially the significance of substrate surface termination, obtained through this study will aid in designing efficient epitaxial growth routes for developing single-crystalline monolayer transition metal dichalcogenides.
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| http://dx.doi.org/10.1021/acsnano.2c08983 | DOI Listing |
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