Electronic and thermal transport properties of the metallic antiferromagnet MnSn.

Phys Chem Chem Phys

Anhui High Reliability Chips Engineering Laboratory, Hefei Innovation Research Institute, Beihang University, Hefei, Anhui 230012, P. R. China.

Published: January 2023

We report the structure, magnetic and electrical/thermal transport properties of the antiferromagnet MnSn. Importantly, the existence of the two antiferromagnetic states below (∼320 K) is confirmed by magnetism and electrical transport measurements. An unsaturated positive magnetoresistance up to 150% at ∼9 was observed at 5 K, whereas the magnetoresistance becomes negative in the whole range at high temperatures ( > 74 K). Systematic investigations of the Hall transport and thermoelectric properties reveal that the hole-type carriers are the majority carriers in MnSn. The kink around 320 K in the Seebeck coefficient originates from the effect of the antiferromagnetic phase on the band structure, while the pronounced peak around 231 K is attributed to the phonon-drag effect. The results suggest that the spin arrangement plays a vital role in the magnetic, electrical, and thermal transport properties in MnSn.

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http://dx.doi.org/10.1039/d2cp04281aDOI Listing

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