Bipolar Resistive Switching in TiO Artificial Synapse Mimicking Pavlov's Associative Learning.

Memristive devices are among the most emerging electronic elements to realize artificial synapses for neuromorphic computing (NC) applications and have potential to replace the traditional von-Neumann computing architecture in recent times. In this work, pulsed laser deposition-manufactured Ag/TiO/Pt memristor devices exhibiting digital and analog switching behavior are considered for NC. The TiO memristor shows excellent performance of digital resistive switching with a memory window of order ∼10. Furthermore, the analog resistive switching offers multiple conductance levels supporting the development of the bioinspired synapse. A possible mechanism for digital and analog switching behavior in our device is proposed. Remarkably, essential synaptic functions such as pair-pulse facilitation, long-term potentiation (LTP), and long-term depression (LTD) are successfully realized based on the change in conductance through analog memory characteristics. Based on the LTP-LTD, a neural network simulation for the pattern recognition task using the MNIST data set is investigated, which shows a high recognition accuracy of 95.98%. Furthermore, more complex synaptic behavior such as spike-time-dependent plasticity and Pavlovian classical conditioning is successfully emulated for associative learning of the biological brain. This work enriches the TiO-based resistive random-access memory, which provides information about the simultaneous existence of digital and analog behavior, thereby facilitating the further implementation of memristors in low-power NC.