Kesterite CuZnSn(S,Se) (CZTSSe) solar absorbers have attracted intensive investigations for next-generation photovoltaic applications. Here, by using static and molecular dynamics simulations, we investigated the anion compositional dependence of electron-vibration interaction in CZTSSe materials. We found that the conduction band fluctuates more than the valence band, and as a result, the band gap variation is more sensitive to the change of the former, which can be understood in terms of p-d hybridization in the valence bands. Electron-phonon coupling is smaller in CZTSSe alloy compared to pure S- or Se-containing structures, as evidenced by the smaller fluctuation of excitation energy, and can be attributed to the weaker structural dynamics of the metal-anion bond. Small electron-phonon coupling strength may lead to better charge transport in these materials. We also elucidated the interplay between disordered structures and S/Se stoichiometry through analysis of optical line width. The results highlight the importance of anion composition engineering and provide new insights into the rational design of high-performing kesterite absorbers for solar cells.
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http://dx.doi.org/10.1021/acs.jpclett.2c03631 | DOI Listing |
Rev Sci Instrum
January 2025
Indian Institute of Science Education and Research, Thiruvananthapuram, Kerala 695551, India.
Quantum technology exploits fragile quantum electronic phenomena whose energy scales demand ultra-low electron temperature operation. The lack of electron-phonon coupling at cryogenic temperatures makes cooling the electrons down to a few tens of millikelvin a non-trivial task, requiring extensive efforts on thermalization and filtering high-frequency noise. Existing techniques employ bulky and heavy cryogenic metal-powder filters, which prove ineffective at sub-GHz frequency regimes and unsuitable for high-density quantum circuits such as spin qubits.
View Article and Find Full Text PDFPhys Chem Chem Phys
January 2025
Theoretical Physics Section, Bhabha Atomic Research Centre, Mumbai-400085, India.
Extensive research on ultrashort laser-induced melting of noble metals like Au, Ag and Cu is available. However, studies on laser energy deposition and thermal damage of their alloys, which are currently attracting interest for energy harvesting and storage devices, are limited. This study investigates the melting damage threshold (DT) of three intermetallic alloys of Au and Cu (AuCu, AuCu and AuCu) subjected to single-pulse femtosecond laser irradiation, comparing them with their constituent metals.
View Article and Find Full Text PDFSmall
January 2025
Center of Quantum Materials and Devices, College of Physics, Chongqing University, Chongqing, 401331, China.
Spin-orbit coupling (SOC) induced nontrivial bandgap and complex Fermi surface has been considered to be profitable for thermoelectrics, which, however, is generally appreciable only in heavy elements, thereby detrimental to practical application. In this study, the SOC-driven extraordinary thermoelectric performance in a light 2D material Fe₂S₂ is demonstrated via first-principles calculations. The abnormally strong SOC, induced by electron correlation through 3d orbitals polarization, significantly renormalizes the band structures, which opens the bandgap via Fe 3d orbitals inversion, exposes the second conduction valley with weak electron-phonon coupling, and aligns the energy of Fe 3d and S 3p orbitals with divergent momentum in valence band.
View Article and Find Full Text PDFNano Lett
January 2025
Laser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, California 94720, United States.
Ultrafast near-field optical nanoscopy has emerged as a powerful platform to characterize low-dimensional materials. While analytical and numerical models have been established to account for photoexcited carrier dynamics, quantitative evaluation of the associated pulsed laser heating remains elusive. Here, we decouple the photocarrier density and temperature increase in near-field nanoscopy by integrating the two-temperature model (TTM) with finite-difference time-domain (FDTD) simulations.
View Article and Find Full Text PDFPhys Chem Chem Phys
January 2025
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.
In the study of GaN/AlGaN heterostructure thermal transport, the interference of strain on carriers cannot be ignored. Although existing research has mainly focused on the intrinsic electronic and phonon behavior of the materials, there is a lack of studies on the transport characteristics of the electron-phonon coupling in heterostructures under strain control. This research comprehensively applies first-principles calculations and the Boltzmann transport equation simulation method to deeply analyze the thermal transport mechanism of the GaN/AlGaN heterojunction considering in-plane strain, with particular attention to the regulatory role of electron-phonon coupling on thermal transport.
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