Gas sensing response of ion beam irradiated Ga-doped ZnO thin films.

The ion beam induced modified gallium doped ZnO thin films are studied for their gas sensing applications. The Ag and Si irradiated gallium doped zinc oxide thin films were exposed to various concentrations of ethanol and acetone gas for gas sensing applications. The Ag ion irradiated Ga-doped ZnO thin was optimized at different operating temperature. It was observed that gas sensing response for both ethanol and acetone gas increases with increasing Ag ion fluence. This indicates that the swift heavy ions have improved the sensitivity of Ga-doled ZnO thin film by reducing the particle size. The Si ion irradiated Ga-doped ZnO thin films were also exposed to ethanol and acetone gas for gas sensing applications. In comparison to Ag ion irradiated thin film, the film irradiated with Si ion beam exhibits a greater sensing response to both ethanol and acetone gas.