AI Article Synopsis
- The study explores how charge noise affects the spin coherence of holes in silicon quantum dots, focusing on higher-order corrections to the Luttinger Hamiltonian.
- The research identifies specific "sweet spots" where these corrections lead to improved spin stability, influenced by factors like dot size, asymmetry, and external fields.
- Estimates suggest that at these sweet spots, the dephasing time of hole spins can significantly increase, potentially reaching milliseconds.
Article Abstract
We investigate, theoretically, charge-noise-induced spin dephasing of a hole confined in a quasi-two-dimensional silicon quantum dot. Central to our treatment is accounting for higher-order corrections to the Luttinger Hamiltonian. Using experimentally reported parameters, we find that the new terms give rise to sweet spots for the hole-spin dephasing, which are sensitive to device details: dot size and asymmetry, growth direction, and applied magnetic and electric fields. Furthermore, we estimate that the dephasing time at the sweet spots is boosted by several orders of magnitude, up to on the order of milliseconds.
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| http://dx.doi.org/10.1103/PhysRevLett.129.247701 | DOI Listing |
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