The use of optical interconnects has burgeoned as a promising technology that can address the limits of data transfer for future high-performance silicon chips. Recent pushes to enhance optical communication have focused on developing wavelength-division multiplexing technology, and new dimensions of data transfer will be paramount to fulfill the ever-growing need for speed. Here we demonstrate an integrated multi-dimensional communication scheme that combines wavelength- and mode- multiplexing on a silicon photonic circuit. Using foundry-compatible photonic inverse design and spectrally flattened microcombs, we demonstrate a 1.12-Tb/s natively error-free data transmission throughout a silicon nanophotonic waveguide. Furthermore, we implement inverse-designed surface-normal couplers to enable multimode optical transmission between separate silicon chips throughout a multimode-matched fibre. All the inverse-designed devices comply with the process design rules for standard silicon photonic foundries. Our approach is inherently scalable to a multiplicative enhancement over the state of the art silicon photonic transmitters.
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http://dx.doi.org/10.1038/s41467-022-35446-4 | DOI Listing |
Inverse design (ID) is a computational method that systematically explores a design space to find optimal device geometries based on specific performance criteria. In silicon photonics, ID often generates design features that degrade significantly due to the fabrication process, limiting the applicability of these devices in scalable fabrication. We demonstrate a solution to this performance degradation through fabrication-aware inverse design (FAID), integrating lithography models for deep-ultraviolet (DUV) lithography and electron-beam lithography (EBL) into the shape optimization approach of ID.
View Article and Find Full Text PDFThe cross talk and power consumption of the 2 × 2 optical switch is a key metric in the design of large-scale photonic integrated circuits (PICs). We build a theoretical model of a 2 × 2 Mach-Zehnder interferometer (MZI) optical switch, taking into account both imbalances in the arm loss and the coupler splitting ratio. The splitting ratio imbalance requirement for a given switch cross talk is summarized, which provides a guideline for the switch design.
View Article and Find Full Text PDFWe demonstrate the heterogeneous integration of GaInAsSb-GaSb photodiodes on 220 nm SOI photonic integrated circuits (PICs) using the micro-transfer-printing (μTP) technology, for operation in the short-wave infrared (SWIR) wavelength region. Utilizing an evanescent coupling scheme between a silicon waveguide and a III-V structure, the device exhibits a room temperature responsivity of 1.23 and 1.
View Article and Find Full Text PDFNano Lett
December 2024
KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea.
Over the last three decades, colloidal crystallization has provided an easy-to-craft platform for mesoscale engineering of photonic and phononic crystals. Nevertheless, the crystal lattices achieved thus far with commodity colloids are largely limited to symmetric and densely packed structures, restricting their functionalities. To obtain non-close-packed crystals and the resulting complexity of the available structures, directional binding between "patchy" colloids has been pursued.
View Article and Find Full Text PDFACS Energy Lett
December 2024
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
Solid-state batteries (SSBs) with silicon anodes could enable improved safety and energy density compared to lithium-ion batteries. However, degradation arising from the massive volumetric changes of silicon anodes during cycling is not well understood in solid-state systems. Here, we use X-ray computed microtomography to reveal micro- to macro-scale chemo-mechanical degradation processes of silicon anodes in SSBs.
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