Thickness-Independent Capacitive Performance of Holey Ti C T Film Prepared through a Mild Oxidation Strategy.

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Key Laboratory of Applied Surface and Colloid Chemistry, MOE, Shaanxi Engineering Lab for Advanced Energy Technology, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, 620 West Chang'an Street, Xi'an, Shaanxi, 710119, China.

Published: March 2023

The Ti C T film with metallic conductivity and high pseudo-capacitance holds profound promise in flexible high-rate supercapacitors. However, the restacking of Ti C T sheets hinders ion access to thick film electrodes. Herein, a mild yet green route has been developed to partially oxidize Ti C T to TiO /Ti C T by introducing O  molecules during refluxing the Ti C T suspension. The subsequent etching away of these TiO  nanoparticles by HF leaves behind numerous in-plane nanopores on the Ti C T sheets. Electrochemical impedance spectroscopy shows that longer oxidation time of 40 min yields holey Ti C T (H-Ti C T ) with a much shorter relax time constant of 0.85 s at electrode thickness of 25 µm, which is 89 times smaller than that of the pristineTi C T film (75.58 s). Meanwhile, H-Ti C T film with 25 min oxidation exhibits less-dependent capacitive performance in film thickness range of 10-84 µm (1.63-6.41 mg cm ) and maintains around 60% capacitance as the current density increases from 1 to 50 A g . The findings clearly demonstrate that in-plane nanopores not only provide more electrochemically active sites, but also offer numerous pathways for rapid ion impregnation across the thick Ti C T film. The method reported herein would pave way for fabricating porous MXene materials toward high-rate flexible supercapacitor applications.

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Source
http://dx.doi.org/10.1002/smll.202205947DOI Listing

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