The Cl diadduct [BuN][A·2Cl] of the mixed cyclohexatetrelane (SiCl)(GeMe), A, is accessible from MeGeCl, 6 eq. SiCl, and 2 eq. [BuN]Cl in one step (96%). Free, tenfold functionalized A can be released from the primary product by decomplexation with AlCl (78%). Insight into the assembly mechanism of [BuN][A·2Cl] and the reactivity of A is provided.
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http://dx.doi.org/10.1039/d2cc06060d | DOI Listing |
Chem Commun (Camb)
January 2023
Institute for Inorganic and Analytical Chemistry, Goethe University Frankfurt, Max-von-Laue-Straße 7, Frankfurt am Main 60438, Germany.
The Cl diadduct [BuN][A·2Cl] of the mixed cyclohexatetrelane (SiCl)(GeMe), A, is accessible from MeGeCl, 6 eq. SiCl, and 2 eq. [BuN]Cl in one step (96%).
View Article and Find Full Text PDFWe report a versatile chemical vapor deposition (CVD) method to dope Ge films with Ga atoms in situ over a wide concentration range spanning from 3 × 10 to 2.7 × 10 cm. The method introduces a stable and volatile Ga hydride [DGaN(CH)] that reacts readily with GeH to deliver Ga dopants controllably and systematically at complementary metal-oxide-semiconductor compatible ultralow temperatures of ∼360 °C.
View Article and Find Full Text PDFPhys Chem Chem Phys
January 2017
Department of Physics, Colorado School of Mines, Golden, CO 80401, USA.
It has been long sought to create magnetism out of simple non-magnetic materials, such as silicon and germanium. Here we show that intrinsic magnetism exists in bilayer silicene and germanene with no need to cut, etch, or dope. Unlike bilayer graphene, strong covalent interlayer bonding formed in bilayer silicene and germanene breaks the original π-bonding network of each layer, leaving the unbonded electrons unpaired and localized to carry magnetic moments.
View Article and Find Full Text PDFNanotechnology
August 2016
Department of Chemistry, University College Cork, Cork, Ireland. Tyndall National Institute, University College Cork, Cork, Ireland. AMBER@CRANN, Trinity College Dublin, Dublin 2, Ireland.
Advanced doping technologies are key for the continued scaling of semiconductor devices and the maintenance of device performance beyond the 14 nm technology node. Due to limitations of conventional ion-beam implantation with thin body and 3D device geometries, techniques which allow precise control over dopant diffusion and concentration, in addition to excellent conformality on 3D device surfaces, are required. Spin-on doping has shown promise as a conventional technique for doping new materials, particularly through application with other dopant methods, but may not be suitable for conformal doping of nanostructures.
View Article and Find Full Text PDFLangmuir
April 2012
Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712, United States.
A facile room-temperature electrochemical deposition process for germanium sulfide (GeS(x)) has been developed with the use of an ionic liquid as an electrolyte. The electrodeposition mechanism follows the induced codeposition of Ge and S precursors in ionic liquids generating GeS(x) films. The electrodeposited GeS(x) films were characterized by scanning electron microscopy-energy dispersive X-ray spectroscopy (SEM-EDS) and Raman and X-ray photoelectron spectroscopy (XPS).
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