The lattice thermal conductivity of CsX (X = Cl, Br, and I) and its pressure dependence are investigated using first-principles third-order anharmonic force constants. Contrary to the expectation that compounds with heavier atoms usually exhibit lower lattice thermal conductivity (), the of CsI is higher than those of CsCl and CsBr. This anomalous behavior is examined by analyzing the group velocity, phonon lifetime, three-phonon scattering phase space and Grüneisen parameters. The higher of CsI can be attributed to its longer phonon lifetimes due to weaker absorption processes in the range of 1 ∼ 2.1 THz. It is found that the lattice thermal conductivity of CsI is more sensitive to hydrostatic pressure, and the of CsI becomes lower than those of CsCl and CsBr at -2 GPa due to the shorter phonon lifetimes and the smaller group velocities. Moreover, the changes in the bulk modulus and Bader charge of CsX are also discussed to provide further insight into its anomalous thermal behavior.
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http://dx.doi.org/10.1039/d2cp05308j | DOI Listing |
Materials (Basel)
January 2025
Daegyung Technology Application Division, Korea Institute of Industrial Technology, Daegu-si 42994, Republic of Korea.
In semiconductor inspection equipment, a chuck used to hold a wafer is equipped with a cooling or heating system for temperature uniformity across the surface of the wafer. Surface temperature uniformity is important for increasing semiconductor inspection speed. Triply periodic minimal surfaces (TPMSs) are proposed to enhance temperature uniformity.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Hubei Longzhong Laboratory, Wuhan University of Technology, Xiangyang Demonstration Zone, Xiangyang 441000, China.
Materials with high crystallographic symmetry are supposed to be good thermoelectrics because they have high valley degeneracy () and superb carrier mobility (μ). Binary GeSe crystallizes in a low-symmetry orthorhombic structure accompanying the stereoactive 4s lone pairs of Ge. Herein, we rationally modify GeSe into a high-symmetry rhombohedral structure by alloying with GeTe based on the valence-shell electron-pair repulsion theory.
View Article and Find Full Text PDFColloids Surf B Biointerfaces
January 2025
Biofunctional Nanomaterials Laboratory, Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, Querétaro 76230, Mexico. Electronic address:
The integration of multiple functionalities into single theranostic platforms offers new opportunities for personalized and minimally invasive clinical interventions, positioning these materials as highly promising tools in modern medicine. Thereby, magneto-luminescent Janus-like nanoparticles (JNPs) were developed herein, and encapsulated into near-infrared (NIR) light- and pH- responsive micelle-like aggregates (Mic) for simultaneous magnetic targeting, biomedical imaging, photothermal therapy, and pH- NIR-light activated drug delivery. The JNPs consisted of NaYF:Yb,Tm upconverting nanoparticles (UCNPs) on which a well-differentiated magnetite structure (MNPs) grew epitaxially.
View Article and Find Full Text PDFJ Am Chem Soc
January 2025
Key Laboratory of Cluster Science of Ministry of Education, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China.
The integration of spin crossover (SCO) magnetic switching and electric polarization properties can engender intriguing correlated magnetic and electric phenomena. However, achieving substantial SCO-induced polarization change through rational molecular design remains a formidable challenge. Herein, we present a polar Fe(II) compound that exhibits substantial polarization change in response to a thermally regulated low-spin ↔ high-spin transition.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), IIT M Research Park, Chennai 600113, India.
The MgSb-based layered compounds exhibit exceptional thermoelectric properties over a wide temperature range and possess the potential to supplant traditional BiTe modules with reliable and economical MgSb-based thermoelectric devices, contingent upon the availability of a complementary p-type MgSb material with high thermoelectric efficiency comparable to that of n-type MgSb. We provide a simpler method involving the codoping of monovalent atoms (K and Na) at the Mg site of the MgSb lattice to improve the thermoelectric performance of p-type MgSb. K-Na codoping results in a peak power factor of around 0.
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