A shorter processing time is desirable for quantum computation to minimize the effects of noise. We propose a simple procedure to variationally determine a set of parameters in the transverse-field Ising model for quantum annealing (QA) appended with a field along the [Formula: see text]-axis. The method consists of greedy optimization of the signs of coefficients of the [Formula: see text]-field term based on the outputs of short annealing processes. We test the idea in the ferromagnetic system with all-to-all couplings and spin-glass problems, and find that the method outperforms the traditional form of QA and simulated annealing in terms of the success probability and the time to solution, in particular, in the case of shorter annealing times, achieving the goal of improved performance while avoiding noise. The non-stoquastic [Formula: see text] term can be eliminated by a rotation in the spin space, resulting in a non-trivial diabatic control of the coefficients in the stoquastic transverse-field Ising model, which may be feasible for experimental realization. This article is part of the theme issue 'Quantum annealing and computation: challenges and perspectives'.
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http://dx.doi.org/10.1098/rsta.2021.0416 | DOI Listing |
ACS Nano
January 2025
School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China.
Single-crystal Au(111), renowned for its chemically inert surface, long-range "herringbone" reconstruction, and high electrical conductivity, has long served as an exemplary template in diverse fields, , crystal epitaxy, electronics, and electrocatalysis. However, commercial Au(111) products are high-priced and limited to centimeter sizes, largely restricting their broad applications. Herein, a low-cost, high-reproducible method is developed to produce 4 in.
View Article and Find Full Text PDFNanomaterials (Basel)
January 2025
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.
In situ X-ray reciprocal space mapping was performed during the interval heating and cooling of InGaN/GaN quantum wells (QWs) grown via metal-organic vapor phase epitaxy (MOVPE). Our detailed in situ X-ray analysis enabled us to track changes in the peak intensities and radial and angular broadenings of the reflection. By simulating the radial diffraction profiles recorded during the thermal cycle treatment, we demonstrate the presence of indium concentration distributions (ICDs) in the different QWs of the heterostructure (1.
View Article and Find Full Text PDFNanotechnology
January 2025
Radiophysics, Tomsk State University, Lenin, 36, Tomsk, Tomsk region, 634050, RUSSIAN FEDERATION.
Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both on Si and silicon-on-insulator (SOI) substrates were investigated. Elastic strained state of grown films was demonstrated by x-ray diffractometry. Annealing of p-i-n structures before the mesa fabrication can improve the ideality factor of current-voltage characteristics.
View Article and Find Full Text PDFNano Converg
January 2025
Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea.
Two-dimensional halide perovskites are attracting attention due to their structural diversity, improved stability, and enhanced quantum efficiency compared to their three-dimensional counterparts. In particular, Dion-Jacobson (DJ) phase perovskites exhibit superior structural stability compared to Ruddlesden-Popper phase perovskites. The inherent quantum well structure of layered perovskites leads to highly anisotropic charge transport and optical properties.
View Article and Find Full Text PDFNanotechnology
January 2025
Radiophysics, Tomsk State University, Lenin, 36, Tomsk, Tomsk region, 634050, RUSSIAN FEDERATION.
Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both on Si and silicon-on-insulator (SOI) substrates were investigated. Elastic strained state of grown films was demonstrated by x-ray diffractometry. Annealing of p-i-n structures before the mesa fabrication can improve the ideality factor of current-voltage characteristics.
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