AI Article Synopsis
- Two-dimensional transition metal dichalcogenides (TMDs) show promise for on-chip integration due to their unique photon-electron-spin-valley coupling properties.
- Researchers used ultrafast terahertz emission spectroscopy to study the photocurrent dynamics in monolayer WSe, discovering an interface-induced amplification of photocurrent in the WSe/Si structure.
- The study reveals that the amplified photocurrent is influenced by band bending at the WSe and Si junction and maintains a consistent chirality, hinting at potential advancements in valley-polarized terahertz emission devices using TMDs.
Article Abstract
Two-dimensional transition metal dichalcogenides (TMDs) have great potential application for seamless on-chip integration due to their strong photon-electron-spin-valley coupling. However, the contact-free measurements of the valley-coupled photocurrent in TMDs is still challenging. Here, ultrafast terahertz emission spectroscopy is employed to investigate the photocurrent dynamics in monolayer WSe, and an interface-induced drift current amplification is found in the WSe/Si heterostructure. The amplification of terahertz emission comes from the photocurrent enlarged by band bending in the WSe and Si junction, and the amplification ratio increase further near the valley resonant transition of WSe. In addition, the valley-momentum locked photocurrent in the WSe/Si heterostructure reserves the same chirality with monolayer WSe at room temperature. These findings could provide a new method for manipulating valley-momentum locked photocurrent by photon helicity and open new avenues for TMD-based valley-polarized terahertz emission devices.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/acs.jpclett.2c03347 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!