Activation energies of defect migration in perovskite halides are widely obtained through static supercell calculations with the nudged-elastic-band method. Taking methylammonium lead iodide (CHNHPbI, MAPbI) as an example, we demonstrate that such calculations are unreliable for the higher symmetry structures adopted by the material at temperatures relevant to device operation (tetragonal and cubic MAPbI) because, in addition to ion relaxation around the point defects, local structural modifications characteristic of the ground-state (orthorhombic) structure occur. In this way, we offer a simple explanation of why calculated activation energies of defect migration in MAPbI suffer from surprisingly large scatter. We propose a robust test to determine whether static supercell calculations of point-defect processes in perovskite systems are reliable.
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http://dx.doi.org/10.1021/acs.jpclett.2c02984 | DOI Listing |
Phys Chem Chem Phys
October 2024
Department of Energy Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan.
J Mol Model
April 2024
School of Physics, Shenyang Normal University, Shenyang, People's Republic of China.
Content: In this thesis, the role of N atom doping and biaxial strain in modulating the electronic structure and optical properties of antimonene has been deeply investigated using a first-principles approach based on density-functional theory. The results show that N doping significantly reduces the band gap of antimonene and introduces new electronic states, thus affecting its electronic structure. In terms of optical properties, N doping reduces the static permittivity of antimonene and alters its absorption, reflection, and energy loss properties.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2024
L'Orme des Merisiers, Synchrotron SOLEIL, Saint-Aubin BP 48, 91192 Gif-sur-Yvette Cedex, France.
In the quest for thinner and more efficient ferroelectric devices, HfZrO (HZO) has emerged as a potential ultrathin and lead-free ferroelectric material. Indeed, when deposited on a TiN electrode, 1-25 nm thick HZO exhibits excellent ferroelectricity capability, allowing the prospective miniaturization of capacitors and transistor devices. To investigate the origin of ferroelectricity in HZO thin films, we conducted a far-infrared (FIR) spectroscopic study on 5 HZO films with thicknesses ranging from 10 to 52 nm, both within and out of the ferroelectric thickness range where ferroelectric properties are observed.
View Article and Find Full Text PDFJ Phys Chem Lett
December 2022
Institute of Physical Chemistry, RWTH Aachen University, 52056 Aachen, Germany.
Activation energies of defect migration in perovskite halides are widely obtained through static supercell calculations with the nudged-elastic-band method. Taking methylammonium lead iodide (CHNHPbI, MAPbI) as an example, we demonstrate that such calculations are unreliable for the higher symmetry structures adopted by the material at temperatures relevant to device operation (tetragonal and cubic MAPbI) because, in addition to ion relaxation around the point defects, local structural modifications characteristic of the ground-state (orthorhombic) structure occur. In this way, we offer a simple explanation of why calculated activation energies of defect migration in MAPbI suffer from surprisingly large scatter.
View Article and Find Full Text PDFJ Phys Condens Matter
September 2022
Joint Institute for High Temperatures of the Russian Academy of Sciences, Izhorskaya 13 Building 2, Moscow 125412, Russia.
The cubic phase of magnetite is stabilized above the Verwey transition temperature of about 120 K via a complex electron-phonon interaction that is still not very well understood. In this work using the DFT + U method we describe our attempt to calculate point defect formation energies for this cubic phase in the static approximation. The electronic structure calculations and atomic relaxation peculiarities are discussed in this context.
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