The vanishing band gap of graphene has long presented challenges for making high-quality quantum point contacts (QPCs)─the partially transparent p-n interfaces introduced by conventional split gates tend to short circuit the QPCs. This complication has hindered the fabrication of graphene quantum Hall Fabry-Pérot interferometers, until recent advances have allowed split-gate QPCs to operate utilizing the highly resistive ν = 0 state. Here, we present a simple recipe to fabricate QPCs by etching a narrow trench in the graphene sheet to separate the conducting channel from self-aligned graphene side gates. We demonstrate operation of the individual QPCs in the quantum Hall regime and further utilize these QPCs to create and study a quantum Hall interferometer.
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http://dx.doi.org/10.1021/acs.nanolett.2c03805 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & 2B Raja S. C. Mullick Road, Kolkata 700032, India.
Materials exhibiting topological transport properties, such as a large topological Hall resistivity, are crucial for next-generation spintronic devices. Here, we report large topological Hall resistivities in epitaxial supermalloy (NiFeMo) thin films with [100] and [111] orientations grown on single-crystal MgO (100) and AlO (0001) substrates, respectively. While X-ray reciprocal maps confirmed the epitaxial growth of the films, X-ray stress analyses revealed large residual strains in the films, inducing tetragonal distortions of the cubic NiFeMo unit cells.
View Article and Find Full Text PDFMater Horiz
January 2025
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
The quantum anomalous Hall effect (QAHE) with a high Chern number hosts multiple dissipationless chiral edge channels, which is of fundamental interest and promising for applications in spintronics. However, QAHE is currently limited in two-dimensional (2D) ferromagnets with Chern number . Using a tight-binding model, we put forward that Floquet engineering offers a strategy to achieve QAHE in 2D nonmagnets, and, in contrast to generally reported QAHE in 2D ferromagnets, a high-Chern-number is obtained accompanied by the emergence of two chiral edge states.
View Article and Find Full Text PDFAdv Mater
January 2025
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, 53706, USA.
Unconventional spin-orbit torques arising from electric-field-generated spin currents in anisotropic materials have promising potential for spintronic applications, including for perpendicular magnetic switching in high-density memory applications. Here, all the independent elements of the spin torque conductivity tensor allowed by bulk crystal symmetries for the tetragonal conductor IrO are determined via measurements of conventional (in-plane) anti-damping torques for IrO thin films in the high-symmetry (001) and (100) orientations. It is then tested whether rotational transformations of this same tensor can predict both the conventional and unconventional anti-damping torques for IrO thin films in the lower-symmetry (101), (110), and (111) orientations, finding good agreement.
View Article and Find Full Text PDFAdv Mater
January 2025
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
Thick metamorphic buffers are considered indispensable for III-V semiconductor heteroepitaxy on large lattice and thermal-expansion mismatched silicon substrates. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistors (HEMT) impose a substantial thermal resistance, deteriorating device efficiency and lifetime by throttling heat extraction. To circumvent this, a systematic methodology for the direct growth of GaN after the AlN nucleation layer on six-inch silicon substrates is demonstrated using metal-organic vapor phase epitaxy (MOVPE).
View Article and Find Full Text PDFNature
January 2025
Quantum Matter Institute, University of British Columbia, Vancouver, British Columbia, Canada.
In a dilute two-dimensional electron gas, Coulomb interactions can stabilize the formation of a Wigner crystal. Although Wigner crystals are topologically trivial, it has been predicted that electrons in a partially filled band can break continuous translational symmetry and time-reversal symmetry spontaneously, resulting in a type of topological electron crystal known as an anomalous Hall crystal. Here we report signatures of a generalized version of the anomalous Hall crystal in twisted bilayer-trilayer graphene, whose formation is driven by the moiré potential.
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