In this paper, a facile modifying technique of source/drain regions conductivity was proposed for self-aligned top-gate In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) by controlling the process parameter of the passivation layer at relatively low temperatures. The sheet resistance of the source and drain regions of IGZO was approximately 365 Ω/□, and there was no significant change within a month. The device parameters of mobility, threshold voltage, subthreshold swing, and current switching ratio of the fabricated device were 15.15 cmVs, 0.09 V, 0.15 V/dec, and higher than 10, respectively. The threshold voltage drift under negative bias illumination stress was -0.34 V. In addition, a lower channel width-normalized contact resistance of 9.86 Ω·cm was obtained.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9697236 | PMC |
| http://dx.doi.org/10.3390/nano12224021 | DOI Listing |
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