Transition metal dichalcogenides (TMDs) are regarded as promising cathode materials for zinc-ion storage owing to their large interlayer spacings. However, their capabilities are still limited by sluggish kinetics and inferior conductivities. In this study, a facile one-pot solvothermal method is exploited to vertically plant piezoelectric 1T MoSe nanoflowers on carbon cloth (CC) to fabricate crystallographically textured electrodes. The self-built-in electric field owing to the intrinsic piezoelectricity during the intercalation/deintercalation processes can serve as an additional piezo-electrochemical coupling accelerator to enhance the migration of Zn . Moreover, the expanded interlayer distance (9-10 Å), overall high hydrophilicity, and conductivity of the 1T phase MoSe also promoted the kinetics. These advantages endow the tailored 1T MoSe /CC nanopiezocomposite with feasible Zn diffusion and desirable electrochemical performances at room and low temperatures. Moreover, 1T MoSe /CC-based quasi-solid-state zinc-ion batteries are constructed to evaluate the potential of the proposed material in low-temperature flexible energy storage devices. This work expounds the positive effect of intrinsic piezoelectricity of TMDs on Zn migration and further explores the availabilities of TMDs in low-temperature wearable energy-storage devices.
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http://dx.doi.org/10.1002/adma.202208615 | DOI Listing |
Nano Lett
January 2025
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
In van der Waals (vdW) architectures of transition metal dichalcogenides (TMDCs), the coupling between interlayer exciton and quantum degrees of freedom opens unprecedented opportunities for excitonic physics. Taking the MoSe homobilayer as representative, we identify that the interlayer registry defines the nature and dynamics of the lowest-energy interlayer exciton. The large layer polarization () is proved, which ensures the formation of layer-resolved interlayer excitons.
View Article and Find Full Text PDFSci Adv
January 2025
Department of Physics, University of Arizona, Tucson, AZ 85721, USA.
Sci Rep
January 2025
MOE Key Laboratory of Laser Life Science, Institute of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou, 510631, China.
We integrate monolayer TMDCs into silicon-on-insulation (SOI) waveguides and dielectric-loaded surface plasmon polariton (DLSPP) waveguides to enhance nonlinear parameters (γ) of silicon-based waveguides. By optimizing the waveguide geometry, we have achieved significantly improved γ. In MoSe-on-SOI and MoSe-in-DLSPP waveguide with optimized geometry, the maximum γ at the excitonic resonant peak (λ) is 5001.
View Article and Find Full Text PDFAdv Mater
December 2024
Institute of Materials Research, Center of Double Helix, Guangdong Provincial Key Laboratory of Thermal Management Engineering and Materials, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China.
Liquid exfoliation is a scalable and effective method for synthesizing 2D nanosheets (NSs) but often induces contamination and defects. Here, liquid metal gallium (Ga) is used to exfoliate bulk layered materials into 2D NSs at near room temperature, utilizing the liquid surface tension and Ga intercalation to disrupt Van der Waals (vdW) forces. In addition, the process can transform the 2H-phase of transition metal dichalcogenides into the 1T'-phase under ambient conditions.
View Article and Find Full Text PDFNanoscale
December 2024
Layered Materials and Device Physics Laboratory, Department of Chemistry, Physics and Atmospheric Science, Jackson State University, Jackson, MS 39217, USA.
The metal-to-insulator phase transition (MIT) in two-dimensional (2D) materials under the influence of a gating electric field has revealed interesting electronic behavior and the need for a deeper fundamental understanding of electron transport processes, while attracting much interest in the development of next-generation electronic and optoelectronic devices. Although the mechanism of the MIT in 2D semiconductors is a topic under debate in condensed matter physics, our work demonstrates the tunable percolative phase transition in few-layered MoSe field-effect transistors (FETs) using different metallic contact materials. Here, we attempted to understand the MIT through temperature-dependent electronic transport measurements by tuning the carrier density in a MoSe channel under the influence of an applied gate voltage.
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