In this study, in situ piezoelectricity was incorporated into the photoactive region to prepare a self-powered deep-ultraviolet photodetector based on a mixture of polyvinylidene fluoride (PVDF)@GaO and polyethyleneimine (PEI)/carbon quantum dots (CQDs). A ferroelectric composite layer was prepared using β-GaO as a filler, and the β-phase of PVDF was used as the polymer matrix. The strong piezoelectricity of β-PVDF can facilitate the separation and transport of photogenerated carriers in the depletion region and significantly reduce the dark current when the device is biased with an external bias, resulting in a high on/off ratio and high detection capability.
Rare-earth-based nanomaterials with exceptional electrochemical properties can be obtained a simple, low-cost, environment-friendly citrate-gel-matrix approach. Owing to their high specific capacitance, strong conductivity, and electrochemical stability, gallium-based materials are capable of withstanding numerous charge-discharge cycles, thus extending the life cycle of a supercapacitor. This tunability enabled researchers to alter the morphology and composition of the electrode to enhance supercapacitor performance.
Facile phase transitions and electrical degradation of amorphous oxide semiconductors due to a high thermal budget have significantly limited their dynamic random-access memory (DRAM) applications, which require high thermal stability at temperatures over 600 °C. In this paper, we report an amorphous In-Sn-Ga-O (ITGO) semiconductor fabricated via atomic layer deposition, which exhibits high-temperature (∼700 °C) phase stability with moderate electrical properties. The optimal Sn-rich ITGO composition (In/Sn/Ga = 25:58:17 at.
MacDiarmid Institute for Advanced Materials and Nanotechnology, Department of Physics, University of Auckland, Private Bag 92019, Auckland, New Zealand.
Liquid metal (LM) technologies are rapidly advancing in modern materials science, with low melting point metals playing a pivotal role in emerging applications. Recent studies reveal that doped liquid gallium systems form spectacular and diverse surface structures during cooling, [Tang , , 2021, , 431-439] sparking renewed interest in the possible geometric structuring at the surface of pure liquid gallium. Distinct from the known increase in surface density, this lateral surface order has long been hinted at experimentally and theoretically but has remained enigmatic.
Due to the advantages of ultrawide bandgap, chemical stability, self-powered, and low cost, gallium oxide (GaO) based photodetectors (PDs) are considered as one of the most promising solar-blind ultraviolet PDs, having garnered significant attention in fields such as missile warning and flame arc detection. High selective ratios and excellent responsivity are important to reduce the false alarm rate in solar-blind detection. However, due to the lack of p-type GaO, existing GaO-based PN PDs utilized heterostructures with narrower bandgap p-type semiconductors (e.
