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Achieving higher thermoelectric performance of n-type PbTe by adjusting the band structure and enhanced phonon scattering. | LitMetric

Achieving higher thermoelectric performance of n-type PbTe by adjusting the band structure and enhanced phonon scattering.

Nanoscale

Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, P. R. China.

Published: December 2022

Due to the very distinct electronic band structure and lower power factor, the exploration of n-type PbTe as thermoelectric materials has historically fallen behind that of p-type PbTe. In this work, n-type PbSbTe-based composites incorporated with CuSbS nanoparticles are synthesized and investigated. Sb doping is utilized to modify its carrier concentration in order to obtain n-type PbTe materials with a high power factor. Then, the incorporation of CuSbS nanoparticles can generate semi-coherent nanophase CuTe, and simultaneously optimize the thermal and electrical properties due to remarkable energy filtering effects and interface scattering in the higher temperature range. Eventually, a peak figure of merit ZT ≈ 1.58 was obtained at 773 K for the sample PbSbTe + 1.5 wt% CuSbS, indicating that the incorporation of CuSbS in PbSbTe is an effective approach to improve its thermoelectric performance.

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Source
http://dx.doi.org/10.1039/d2nr04419fDOI Listing

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