Pure 2D Perovskite Formation by Interfacial Engineering Yields a High Open-Circuit Voltage beyond 1.28 V for 1.77-eV Wide-Bandgap Perovskite Solar Cells.

Surface post-treatment using ammonium halides effectively reduces large open-circuit voltage (V ) losses in bromine-rich wide-bandgap (WBG) perovskite solar cells (PSCs). However, the underlying mechanism still remains unclear and the device efficiency lags largely behind. Here, a facile strategy of precisely tailoring the phase purity of 2D perovskites on top of 3D WBG perovskite and realizing high device efficiency is reported. The transient absorption spectra, cross-sectional confocal photoluminescence mapping, and cross-sectional Kelvin probe force microscopy are combined to demonstrate optimal defect passivation effect and surface electric-field of pure n = 1 2D perovskites formed atop 3D WBG perovskites via low-temperature annealing. As a result, the inverted champion device with 1.77-eV perovskite absorber achieves a high V of 1.284 V and a power conversion efficiency (PCE) of 17.72%, delivering the smallest V deficit of 0.486 V among WBG PSCs with a bandgap higher than 1.75 eV. This enables one to achieve a four-terminal all-perovskite tandem solar cell with a PCE exceeding 25% by combining with a 1.25-eV low-bandgap PSC.