PbI -DMSO Assisted In Situ Growth of Perovskite Wafers for Sensitive Direct X-Ray Detection.

Although perovskite wafers with a scalable size and thickness are suitable for direct X-ray detection, polycrystalline perovskite wafers have drawbacks such as the high defect density, defective grain boundaries, and low crystallinity. Herein, PbI -DMSO powders are introduced into the MAPbI wafer to facilitate crystal growth. The PbI powders absorb a certain amount of DMSO to form the PbI -DMSO powders and PbI -DMSO is converted back into PbI under heating while releasing DMSO vapor. During isostatic pressing of the MAPbI wafer with the PbI -DMSO solid additive, the released DMSO vapor facilitates in situ growth in the MAPbI wafer with enhanced crystallinity and reduced defect density. A dense and compact MAPbI wafer with a high mobility-lifetime (µτ) product of 8.70 × 10 cm V is produced. The MAPbI -based direct X-ray detector fabricated for demonstration shows a high sensitivity of 1.58 × 10 µC Gyair  cm and a low detection limit of 410 nGy s .