Tuning the optical absorption performance of MoS monolayers with compressive strain.

Nanoscale

MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China.

Published: November 2022

AI Article Synopsis

  • Strain engineering is being used to enhance the properties of two-dimensional materials, improving their use in flexible electronics and chip manufacturing.
  • Researchers developed a homemade strain loading device to measure the optical properties of MoS monolayers under compression, observing a shift in optical absorption patterns.
  • Their findings, supported by theoretical calculations, provide a new way to explore the optical characteristics of 2D materials, potentially benefiting the creation of future micro/nano-scale optoelectronic devices.

Article Abstract

Strain engineering has been extensively applied as a promising strategy in the regulation of physical and chemical properties of two-dimensional (2D) materials, which remarkably broadens their application prospects in flexible electronics and chip manufacturing. However, the difficulty in fixing a flexible substrate under compression and the challenge in adjusting the focal distance have hindered the in-depth investigation of compressive strain. Here, we fabricated a home-made strain loading device and proposed a compressive strain measurement method, which the strain-dependent optical absorption properties of MoS monolayers under compression has been studied. According to the measured optical absorption spectra, the first blueshift and then redshift trend under compression was obviously observed. The reliability of the experimentally observed trend in peak position shift was theoretically verified by density functional theory calculation. Our work offers a feasible way to characterize optical properties of 2D materials under compressive strain and expands the space for the development of next-generation micro/nano-scale optoelectronic devices.

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Source
http://dx.doi.org/10.1039/d2nr04362aDOI Listing

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