We report on a phase-resolved, reflection-based, scattering-type near-field scanning optical microscope technique with a convenient all-fiber configuration. Exploiting the flexible positioning of the near-field probe, our technique renders a heterodyne detection for phase measurement and point-to-point frequency-domain reflectometry for group index and loss measurement of waveguides on a chip. The important issue of mitigating the measurement errors due to environmental fluctuations along fiber-optic links has been addressed. We perform systematic measurements on different types of silicon waveguides which demonstrate the accuracy and precision of the technique. With a phase compensation approach on the basis of a common-path interferometer, the phase drift error is suppressed to ∼ 0.013°/s. In addition, characterizations of group index, group velocity dispersion, propagation loss, insertion loss, and return loss of component waveguides on a chip are all demonstrated. The measurement accuracy of the propagation loss of a ∼ 0.2 cm long nano-waveguide reaches ±1 dB/cm. Our convenient and versatile near-field characterization technique paves the way for in-detail study of complex photonic circuits on a chip.
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http://dx.doi.org/10.1364/OE.475192 | DOI Listing |
Adv Sci (Weinh)
January 2025
College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310058, China.
Photonic manipulation of large-capacity data with the advantages of high speed and low power consumption is a promising solution for explosive growth demands in the era of post-Moore. A well-developed lithium-niobate-on-insulator (LNOI) platform has been widely explored for high-performance electro-optic (EO) modulators to bridge electrical and optical signals. However, the photonic waveguides on the x-cut LNOI platform suffer serious polarization-mode conversion/coupling issues because of strong birefringence, making it hard to realize large-scale integration.
View Article and Find Full Text PDFNanomaterials (Basel)
January 2025
State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China.
The integration of a photodetector that converts optical signals into electrical signals is essential for scalable integrated lithium niobate photonics. Two-dimensional materials provide a potential high-efficiency on-chip detection capability. Here, we demonstrate an efficient on-chip photodetector based on a few layers of MoTe on a thin film lithium niobate waveguide and integrate it with a microresonator operating in an optical telecommunication band.
View Article and Find Full Text PDFNpj Nanophoton
January 2025
Department of Physics, Humboldt-Universität zu Berlin, Berlin, Germany.
We introduce a novel material for integrated photonics and investigate aluminum gallium nitride (AlGaN) on aluminum nitride (AlN) templates as a platform for developing reconfigurable and on-chip nonlinear optical devices. AlGaN combines compatibility with standard photonic fabrication technologies and high electro-optic modulation capabilities with low loss over a broad spectral range, from UVC to long-wave infrared, making it a viable material for complex photonic applications. In this work, we design and grow AlGaN/AlN heterostructures and integrate several photonic components.
View Article and Find Full Text PDFNat Commun
January 2025
State Key Laboratory for Extreme Photonics and Instrumentation, Center for Optical & Electromagnetic Research, College of Optical Science and Engineering, International Research Center for Advanced Photonics (Haining), Zhejiang University, Hangzhou, China.
Silicon photonic signal processors promise a new generation of signal processing hardware with significant advancements in processing bandwidth, low power consumption, and minimal latency. Programmable silicon photonic signal processors, facilitated by tuning elements, can reduce hardware development cycles and costs. However, traditional programmable photonic signal processors based on optical switches face scalability and performance challenges due to control complexity and transmission losses.
View Article and Find Full Text PDFNature
January 2025
imec, Leuven, Belgium.
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute and sense the world. However, the lack of highly scalable, native complementary metal-oxide-semiconductor (CMOS)-integrated light sources is one of the main factors hampering its widespread adoption. Despite considerable progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integration by direct epitaxy of III-V materials remains the pinnacle of cost-effective on-chip light sources.
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