AI Article Synopsis
- A new report highlights the development of a p-type graphene/carbon-nanotube (CNT) barristor, which is crucial for creating advanced complementary logic devices.
- A complementary inverter has been designed using both p-type Gr/CNT and n-type Gr/MoS2 barristors, showcasing its performance characteristics.
- The inverter operates at very low power (around 0.2 nW) and achieves a gain of 2.5, demonstrating better efficiency compared to traditional field-effect transistor inverters, particularly at a larger equivalent oxide thickness (EOT) due to the superior switching capabilities of graphene barristors.
Article Abstract
The recent report of a p-type graphene(Gr)/carbon-nanotube(CNT) barristor facilitates the application of graphene barristors in the fabrication of complementary logic devices. Here, a complementary inverter is presented that combines a p-type Gr/CNT barristor with a n-type Gr/MoS2 barristor, and its characteristics are reported. A sub-nW (~0.2 nW) low-power inverter is demonstrated with a moderate gain of 2.5 at an equivalent oxide thickness (EOT) of ~15 nm. Compared to inverters based on field-effect transistors, the sub-nW power consumption was achieved at a much larger EOT, which was attributed to the excellent switching characteristics of Gr barristors.
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|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9658580 | PMC |
| http://dx.doi.org/10.3390/nano12213820 | DOI Listing |
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