Low-Frequency Noise Characteristics in HfO-Based Metal-Ferroelectric-Metal Capacitors.

The transport mechanism of HfO-based metal-ferroelectric-metal (MFM) capacitors was investigated using low-frequency noise (LFN) measurements for the first time. The current-voltage measurement results revealed that the leakage behavior of the fabricated MFM capacitor was caused by the trap-related Poole-Frenkel transport mechanism, which was confirmed by the LFN measurements. The current noise power spectral densities () obtained from the LFN measurements followed 1/ noise shapes and exhibited a constant electric field () × / noise behavior. No polarization dependency was observed in the transport characteristics of the MFM capacitor owing to its structural symmetry.