When a thermoelectric (TE) material is deposited with a secondary TE material, the total Seebeck coefficient of the stacked layer is generally represented by a parallel conductor model. Accordingly, when TE material layers of the same thickness are stacked vertically, the total Seebeck coefficient in the transverse direction may change in a single layer. Here, an abnormal Seebeck effect in a stacked two-dimensional (2D) PtSe /PtSe homostructure film, i.e., an extra in-plane Seebeck voltage is produced by wet-transfer stacking at the interface between the PtSe layers under a transverse temperature gradient is reported. This abnormal Seebeck effect is referred to as the interfacial Seebeck effect in stacked PtSe /PtSe homostructures. This effect is attributed to the carrier-interface interaction, and has independent characteristics in relation to carrier concentration. It is confirmed that the in-plane Seebeck coefficient increases as the number of stacked PtSe layers increase and observed a high Seebeck coefficient exceeding ≈188 µV K at 300 K in a four-layer-stacked PtSe /PtSe homostructure.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9799017 | PMC |
| http://dx.doi.org/10.1002/advs.202203455 | DOI Listing |
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