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Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China.
Published: November 2022
AI Article Synopsis
Manipulation of carrier density in transition-metal dichalcogenides (TMDs), particularly MoS, is crucial for electronic and optoelectronic applications.
The study utilized ionic-liquid-gating (ILG) to inject hydrogen ions (H) into multilayer MoS, leading to nonvolatile n-type doping and improved conductivity, while showing no effect on monolayer MoS.
The enhanced multilayer MoS was successfully used as contact electrodes in monolayer MoS field effect transistors, improving performance and showcasing the potential of ILG technology in TMDs.
Article Abstract
Manipulation of the carrier density of layered transition-metal dichalcogenides (TMDs) is of fundamental significance for a wide range of electronic and optoelectronic applications. Herein, we applied the ionic-liquid-gating (ILG) method to inject the smallest ions, H, into layered MoS to manipulate its carrier concentration. The measurements demonstrate that the injection of H realizes a nonvolatile n-type doping and metallic state in multilayer-MoS with a concentration of injection electron of ∼1.08 × 10 cm but has no effect on monolayer-MoS, which clearly reveals that the H is injected into the interlayer of MoS, not in the crystal lattice. The H-injected multilayer-MoS was then used as the contact electrodes of a monolayer-MoS field effect transistor to improve the contact quality, and its performance has been enhanced. Our work deepens the understanding of the ILG technology and extends its application in TMDs.
